Characteristics of polymer photodetectors using Ga-doped ZnO electrode modified by self-assembled monolayer treatment

机译：自组装单层处理改性的Ga掺杂ZnO电极的聚合物光电探测器的特性

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The characteristics of polymer photodetectors using Ga-doped ZnO (GZO) electrode modified by phosphonic acid-based self-assembled monolayer treatment in a short time are investigated. A polymer photodetector based on a blend of a donor, poly(3-hexylthiophene) (P3HT), and an acceptor, fullerene derivative [6-6]phenyl-C61-butyric acid methyl ester (PCBM) with GZO modified by 2,3,4,5,6-pentafluorobenzylphosphonic acid (FBPA) exhibits incident-photon-to-current conversion efficiency (IPCE) of approximately 55% at −2 V under green light irradiation (λ = 500 nm). The characteristics of the device with GZO modified by FBPA treatment are improved. For the P3HT:PCBM device with FBPA, the dark current decreases, which results in the improved photodetector detectivity.

机译：研究了使用膦酸基自组装单层处理改性的Ga掺杂ZnO（GZO）电极在短时间内对聚合物光电探测器的特性。一种基于给体，聚（3-己基噻吩）（P3HT）和受体，富勒烯衍生物[6-6]苯基-C61-丁酸甲酯（PCBM）与GZO修饰为2,3的混合物的聚合物光电探测器1,4,5,6-五氟苄基膦酸（FBPA）在绿光照射下（λ= 500 nm）在-2 V下表现出约55％的入射光子-电流转换效率（IPCE）。通过FBPA处理修改了GZO的器件的特性得到了改善。对于具有FBPA的P3HT：PCBM器件，暗电流减小了，从而提高了光电探测器的检测能力。

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来源
《2014 IEEE International Meeting for Future of Electron Devices, Kansai》|2014年|1-2|共2页
会议地点 Kyoto(JP)
作者
Liao Yi-Wei; Sato Yusuke; Kajii Hirotake; Ohmori Yutaka;
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作者单位

Graduate School of Engineering, Osaka University, Suita, Osaka, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Dark current; Electrodes; Photodetectors; Polymers; Radiation effects; Substrates; Surface treatment; GZO; photodetector detectivity; polymer photodetectors; self assembled molecular;

机译：暗电流电极;光电探测器聚合物；辐射效应；基材；表面处理; GZO；光电探测器的探测能力；聚合物光电探测器；自组装分子;

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专利

1. Improved characteristics of conventional and inverted polymer photodetectors using phosphonic acid-based self-assembled monolayer treatment for interfacial engineering of Ga-doped ZnO electrodes [J] . Kajii Hirotake, Mohri Yoshinori, Okui Hiyuto, Japanese journal of applied physics . 2018,第3S1期

机译：使用基于膦酸的自组装单层处理改进常规和反向聚合物光电探测器的特性，以进行Ga掺杂ZnO电极的界面工程
2. Improved Sensitivity and Durability of Poly(3-Hexylthiophene)-Based Polymeric Photodetectors Using Indium Tin Oxide Modified by Phosphonic Acid-Based Self-Assembled Monolayer Treatment [J] . HIROTAKE KAJII, YUSUKE SATO, TAICHIRO MORIMUNE, Electronics and communications in Japan . 2016,第7期

机译：膦酸自组装单层处理改性的铟锡氧化物提高了聚（3-己基噻吩）基聚合物光电探测器的灵敏度和耐久性
3. Self-assembled monolayer modified ZnO/metal bilayer cathodes for polymer/fullerene bulk-heterojunction solar cells [J] . Hin-Lap Yip, Steven K. Hau, Nam Seob Baek, Applied Physicsletters . 2008,第19期

机译：用于聚合物/富勒烯本体-异质结太阳能电池的自组装单层改性ZnO /金属双层阴极
4. Characteristics of polymer photodetectors using Ga-doped ZnO electrode modified by self-assembled monolayer treatment [C] . Liao Yi-Wei, Sato Yusuke, Kajii Hirotake, Institute of Electrical and Electronics Engineers International Meeting for Future of Electron Devices, Kansai . 2014

机译：通过自组装单层处理改性Ga掺杂的ZnO电极的聚合物光电探测器的特性
5. Interfacial investigations of a biological electron transfer model: Cytochrome c adsorbed on gold electrodes modified with self-assembled monolayers. [D] . Leopold, Michael Christofi. 2000

机译：生物电子转移模型的界面研究：细胞色素c吸附在用自组装单分子膜修饰的金电极上。
6. NH4OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure Characteristics [O] . Abu ul Hassan Sarwar Rana, Hyun-Seok Kim 2018

机译：NH4OH处理可最佳地权衡水热Ga掺杂n-ZnO / p-Si异质结构特征
7. The effect of Ga-doped nanocrystalline ZnO electrode on deep-ultraviolet enhanced GaN photodetector [O] . Xu K, Wang RX, Yang LC, 2013

机译：Ga掺杂纳米ZnO电极对深紫外增强GaN光电探测器的影响
8. Self-Assembled Monolayers at the Lithium Electrode/Polymer Electrolyte Interface [R] . Teeters, D. 2002

机译：锂电极/聚合物电解质界面上的自组装单分子层

Characteristics of polymer photodetectors using Ga-doped ZnO electrode modified by self-assembled monolayer treatment

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