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首页> 美国卫生研究院文献>Materials >NH4OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure Characteristics
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NH4OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure Characteristics

机译：NH4OH处理可最佳地权衡水热Ga掺杂n-ZnO / p-Si异质结构特征

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Previous studies on Ga-doped ZnO nanorods (GZRs) have failed to address the change in GZR morphology with increased doping concentration. The morphology-change affects the GZR surface-to-volume ratio and the real essence of doping is not exploited for heterostructure optoelectronic characteristics. We present NH4OH treatment to provide an optimum morphological trade-off to n-GZR/p-Si heterostructure characteristics. The GZRs were grown via one of the most eminent and facile hydrothermal method with an increase in Ga concentration from 1% to 5%. The supplementary OH− ion concentration was effectively controlled by the addition of an optimum amount of NH4OH to synchronize GZR aspect and surface-to-volume ratio. Hence, the probed results show only the effects of Ga-doping, rather than the changed morphology, on the optoelectronic characteristics of n-GZR/p-Si heterostructures. The doped nanostructures were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, photoluminescence, Hall-effect measurement, and Keithley 2410 measurement systems. GZRs had identical morphology and dimensions with a typical wurtzite phase. As the GZR carrier concentration increased, the PL response showed a blue shift because of Burstein-Moss effect. Also, the heterostructure current levels increased linearly with doping concentration. We believe that the presented GZRs with optimized morphology have great potential for field-effect transistors, light-emitting diodes, ultraviolet sensors, and laser diodes.
机译：先前对Ga掺杂的ZnO纳米棒（GZRs）的研究未能解决随着掺杂浓度的增加GZR形态的变化。形态变化会影响GZR的表面体积比，并且掺杂的真正本质并未用于异质结构光电特性。我们介绍了NH4OH处理，以为n-GZR / p-Si异质结构特征提供最佳的形态折衷。 GZRs是通过最著名且最简便的水热方法之一生长的，其中Ga浓度从1％增加到5％。通过添加最佳量的NH4OH以同步GZR纵横比和表面体积比，可以有效地控制补充OH-离子的浓度。因此，探测的结果仅显示了Ga掺杂对n-GZR / p-Si异质结构的光电特性的影响，而没有改变形态。掺杂的纳米结构通过扫描电子显微镜，能量色散X射线光谱，X射线衍射，光致发光，霍尔效应测量和吉时利2410测量系统进行表征。 GZR具有与典型纤锌矿相相同的形态和尺寸。随着GZR载流子浓度的增加，由于Burstein-Moss效应，PL反应显示出蓝移。而且，异质结构电流水平随掺杂浓度线性增加。我们认为，提出的具有最佳形态的GZR具有很大的潜力，可用于场效应晶体管，发光二极管，紫外线传感器和激光二极管。

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