Light Emitting Diode and UV Photodetector Characteristics of Solution Processed n-ZnO Nanorods/ p-Si Heterostructures

机译：溶液的发光二极管和UV光电探测器特性N-ZnO纳米棒/ P-Si异质结构

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n-ZnO nanorod/p-si hetrojunction diode is synthesized using a simple chemical solution method on p-type silicon substrates for light emitting diode applications. The grown ZnO nanorods showed highly textured hexagonal crystallographic phase along c-axis. An intense band to band photoluminescence peak is observed at 377 nm in conjunction with the weak deep-level emissions in visible region centred at 500 nm. The current-voltage measurements show diode-like characteristics. The work will also discuss the emission response with bias field for these solution processed n-ZnO/p-Si heterostructures under dark and UV conditions in the context of possible UV photo-response and light emitting diode applications.

机译：使用简单的化学溶液方法在发光二极管应用的P型硅基板上合成N-ZnO纳米棒/ P-Si Hetro结二极管。生长的ZnO纳米棒沿C轴显示出高度纹理的六边形晶形相。在377nm中观察到带光致发光峰的强烈带，与以500nm为中心的可见区域中的弱深度排放。电流 - 电压测量显示二极管状特性。该作品还将讨论具有偏置场的发射响应，用于这些溶液在可能的UV照片响应和发光二极管应用的背景下在暗和紫外条件下加工N-ZnO / P-Si异质结构。

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《International Workshop on the Physics of Semiconductor Devices》|2019年|lvii 567-1299 pages :|共7页
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Chandni Kumari; Ambesh Dixit;
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中图分类 O475-532;
关键词
Light Emitting Diode; UV Photodetector; Heterostructures;

机译：发光二极管;UV光电探测器;异质结构;

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专利

1. Solution-processed n-ZnO nanorod/p-Co3O4 nanoplate heterojunction light-emitting diode [J] . Kim Jong-Woo, Lee Su Jeong, Biswas Pranab, Applied Surface Science . 2017,第JUNa1期

机译：固溶处理的n-ZnO纳米棒/ p-Co3O4纳米板异质结发光二极管
2. Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes [J] . Iwan S., Zhao J. L., Tan S. T., Materials science in semiconductor processing . 2015,第Null期

机译：三价稀土掺杂n-ZnO / p-Si异质结构发光二极管的离子依赖性电致发光
3. Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode [J] . Iwan S., Bambang S., Zhao J.L., Physica, B. Condensed Matter . 2012,第14期

机译：n-ZnO：Er / p-Si异质结构发光二极管的绿色电致发光
4. Light Emitting Diode and UV Photodetector Characteristics of Solution Processed n-ZnO Nanorods/ p-Si Heterostructures [C] . Chandni Kumari, Ambesh Dixit International Workshop on the Physics of Semiconductor Devices . 2019

机译：溶液的发光二极管和UV光电探测器特性N-ZnO纳米棒/ P-Si异质结构
5. MOCVD growth for UV photodetectors and light emitting diodes. [D] . Chowdhury, Uttiya. 2002

机译：用于紫外光电探测器和发光二极管的MOCVD生长。
6. n-ZnO nanorods/p+-Si (111) heterojunction light emitting diodes [O] . Jenn Kai Tsai, Jun Hong Shih, Tian Chiuan Wu, 2012

机译：n-ZnO纳米棒/ p + -Si（111）异质结发光二极管
7. Fabrication and electroluminescence of n-ZnO nanorods/p-Si nanowires heterostructured light-emitting diodes [O] . Jun Dai, Yijie Fan 2016

机译：n-ZnO纳米棒/ p-si纳米线异质结构发光二极管的制备和电致发光

Light Emitting Diode and UV Photodetector Characteristics of Solution Processed n-ZnO Nanorods/ p-Si Heterostructures

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