Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode

Iwan S.; Bambang S.; Zhao J.L.; Tan S.T.; Fan H.M.; Sun L.; Zhang S.; Ryu H.H.; Sun X.W.

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Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode

机译：n-ZnO：Er / p-Si异质结构发光二极管的绿色电致发光

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Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current-voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er ~3 ions doped in ZnO films.

机译：通过超声喷雾热解（USP），将具有各种掺杂浓度的掺b ZnO（ZnO：Er）薄膜沉积在p-Si衬底上。进一步采用n-ZnO：Er / p-Si异质结来制造发光二极管（LED）。该器件显示出类似二极管的整流电流-电压特性，具有较低的反向击穿电压，这归因于雪崩击穿。在室温下在反向偏压下观察到明显的绿色电致发光峰在537nm和558nm处。绿色电致发光源于掺杂在ZnO薄膜中的Er〜3离子的电子碰撞激发。

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来源
《Physica, B. Condensed Matter》 |2012年第14期|共4页
作者
Iwan S.; Bambang S.; Zhao J.L.; Tan S.T.; Fan H.M.; Sun L.; Zhang S.; Ryu H.H.; Sun X.W.;
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正文语种 eng
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Electron impact excitation; n-ZnO:Er/p-Si heterojunctions; Photoluminescence; Room temperature; USP; ZnO:Er;

机译：电子冲击激发;n-ZnO：Er / p-Si异质结;光致发光;室温;USP;ZnO：Er;

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1. Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode [J] . Iwan S., Bambang S., Zhao J.L., Physica, B. Condensed Matter . 2012,第14期

机译：n-ZnO：Er / p-Si异质结构发光二极管的绿色电致发光
2. Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode [J] . Iwan S., Bambang S., Zhao J.L., Physica, B. Condensed Matter . 2012,第14Suppla期

机译：n-ZnO：Er / p-Si异质结构发光二极管的绿色电致发光
3. Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes [J] . Iwan S., Zhao J. L., Tan S. T., Materials science in semiconductor processing . 2015,第Null期

机译：三价稀土掺杂n-ZnO / p-Si异质结构发光二极管的离子依赖性电致发光
4. Fabrication and electroluminescence of n-ZnO nanorods/p-Si nanowires heterostructured light-emitting diodes [C] . Jun Dai, Yijie Fan International Conference on Function Materials and Nanotechnology . 2013

机译：N-ZnO纳米棒/ P-Si纳米线异质结构发光二极管的制造和电致发光
5. Development of n-ZnO/p-Si single heterojunction solar cell with and without interfacial layer. [D] . Hussain, Babar. 2017

机译：具有和不具有界面层的n-ZnO / p-Si单异质结太阳能电池的开发。
6. White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode [O] . JR Sadaf, MQ Israr, S Kishwar, 2010

机译：ZnO纳米管/ GaN异质结构发光二极管的白色电致发光
7. Fabrication and electroluminescence of n-ZnO nanorods/p-Si nanowires heterostructured light-emitting diodes [O] . Jun Dai, Yijie Fan 2016

机译：n-ZnO纳米棒/ p-si纳米线异质结构发光二极管的制备和电致发光

Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode

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