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首页> 外文期刊>Physica status solidi >High-Power Microwave-Assisted Ga Doping, an Effective Method to Tailor n-ZnO/p-Si Heterostructure Optoelectronic Characteristics
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High-Power Microwave-Assisted Ga Doping, an Effective Method to Tailor n-ZnO/p-Si Heterostructure Optoelectronic Characteristics

机译：大功率微波辅助镓掺杂，一种有效的定制n-ZnO / p-Si异质结构光电特性的方法

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摘要

High-power microwave-assisted gallium (Ga) -doped ZnO nanorods (MGZRs) are grown on p-Si substrates, and their optoelectronic characteristics are reported. Gallium nitrate hydrate is mixed with zinc nitrate hexahydrate and hexamethylenetetramine to make 1, 2, and 5% MGZRs in a domestic microwave oven. The MGZR diameter decreased when doping increased from 1 to 2%, but the diameter of the highly doped (5%) sample significantly increased. The EDS results confirm the incorporation of Ga atoms in the ZnO crystal lattice, where an increase in the dopant concentration in growth solution increase the probability of Ga ion incorporation into ZnO crystal lattice. However, exact values for EDS quantification are not found because of Si peaks from the substrate. The high-intensity photoluminescence UV peaks associated to exciton recombination are blue-shifted, and some defects are incorporated by Ga, which respond to the visible and near-IR regions in MGZRs. Furthermore, the n-MGZR/p-Si heterostructures show a diode-like I–V response, where the current levels increase when the doping concentration increase because of an increase in carrier concentration in MGZRs, which is confirmed by Hall-effect measurements. The MGZRs address the low carrier transport issues in undoped microwave-assisted nanorods and are notably effective in altering their optoelectronic characteristics.
机译：高功率微波辅助掺杂镓（Ga）的ZnO纳米棒（MGZR）在p-Si衬底上生长，并报道了其光电特性。将硝酸镓水合物与硝酸锌六水合物和六亚甲基四胺混合，在家用微波炉中制得1、2和5％的MGZR。当掺杂从1％增加到2％时，MGZR直径减小，但是高掺杂（5％）样品的直径显着增加。 EDS结果证实了Ga原子掺入ZnO晶格中，其中生长溶液中掺杂剂浓度的增加增加了Ga离子掺入ZnO晶格中的可能性。然而，由于来自衬底的Si峰，未找到用于EDS定量的准确值。与激子复合相关的高强度光致发光UV峰发生蓝移，并且Ga掺入了一些缺陷，这些缺陷对MGZR中的可见光区域和近红外区域做出了响应。此外，n-MGZR / p-Si异质结构显示出类似二极管的I–V响应，其中，由于MGZR中载流子浓度的增加，当掺杂浓度增加时，电流水平也会增加，这已通过霍尔效应测量得到了证实。 MGZR解决了未掺杂的微波辅助纳米棒中的低载流子传输问题，在改变其光电特性方面特别有效。

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  • 来源
    《Physica status solidi》 |2018年第5期|1700763.1-1700763.5|共5页
  • 作者

    Abu ul Hassan Sarwar Rana; Areej Shahid; Ji Young Lee; Hyun-Seok Kim;

  • 作者单位

    Division of Electronics and Electrical Engineering Dongguk University-Seoul Seoul 04620, South Korea;

    Division of Electronics and Electrical Engineering Dongguk University-Seoul Seoul 04620, South Korea;

    Division of Electronics and Electrical Engineering Dongguk University-Seoul Seoul 04620, South Korea;

    Division of Electronics and Electrical Engineering Dongguk University-Seoul Seoul 04620, South Korea;

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