Reliability of bottom gate amorphous InGaZnO thin-film transistors with siloxane passivation layer

机译：具有硅氧烷钝化层的底栅非晶InGaZnO薄膜晶体管的可靠性

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We investigate the influence of polymer passivation on amorphous Indium Gallium Zinc Oxide (a-IGZO) TFT reliability. We made photosensitive siloxane passivation layer on bottom-gate type a-IGZO TFTs with SiO2/Si substrate. For photosensitive materials, contact holes can be formed by UV photolithography technique without plasma etching process, leading to serious damage to the channel layer. The samples with and without passivation layer were tested in terms of the stability during the positive bias stress (PBS; Vgs = 20 V) for 1000 sec. The stability of a-IGZO TFTs was improved by using the photo-sensitive siloxane passivation layer.

机译：我们研究了聚合物钝化对非晶铟镓锌氧化物（a-IGZO）TFT可靠性的影响。我们在具有SiO2 / Si基板的底栅型a-IGZO TFT上制作了光敏硅氧烷钝化层。对于光敏材料，可以通过紫外线光刻技术形成接触孔，而无需进行等离子蚀刻工艺，从而严重损坏沟道层。对具有钝化层和不具有钝化层的样品进行了1000秒正偏应力（PBS; Vgs = 20 V）期间的稳定性方面的测试。通过使用光敏硅氧烷钝化层，可以改善a-IGZO TFT的稳定性。

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来源
《2014 IEEE International Meeting for Future of Electron Devices, Kansai》|2014年|1-2|共2页
会议地点 Kyoto(JP)
作者
Kulchaisit Chaiyanan; Fujii Mami; Ueoka Yoshihiro; Bermundo Juan Paolo; Horita Masahiro; Ishikawa Yasuaki; Uraoka Yukiharu;
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作者单位

Nara Institute of Science and Technology, 8916-5, Takayama, Ikoma, Nara 630-0192, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Logic gates; Materials; Passivation; Reliability; Stress; Thin film transistors; Threshold voltage; a-InGaZnO; passivation layer; photosensitive siloxane; thin-film transistors;

机译：逻辑门材料；钝化；可靠性;强调;薄膜晶体管；门槛电压； a-InGaZnO;钝化层光敏硅氧烷；薄膜晶体管；;

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专利

1. Reliability Improvement of Amorphous InGaZnO Thin-Film Transistors by Less Hydroxyl-Groups Siloxane Passivation [J] . Kulchaisit Chaiyanan, Ishikawa Yasuaki, Fujii Mami N., Display Technology, Journal of . 2016,第3期

机译：通过较少的羟基基团硅氧烷钝化来提高非晶InGaZnO薄膜晶体管的可靠性
2. Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors [J] . Yan Zhou, Chengyuan Dong Micromachines . 2018,第11期

机译：钝化层对非晶InGaZnO薄膜晶体管正栅极偏置-应力稳定性的影响
3. Comparison of Top-Gate and Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With the Same SiO₂/a-InGaZnO/SiO₂ Stack [J] . Oh S., Baeck J.H., Shin H.S., Electron Device Letters, IEEE . 2014,第10期

机译：SiO _{2 / a-InGaZnO / SiO _{2 叠层相同的顶栅和底栅非晶InGaZnO薄膜晶体管的比较}}
4. Reliability of bottom gate amorphous InGaZnO thin-film transistors with siloxane passivation layer [C] . Kulchaisit Chaiyanan, Fujii Mami, Ueoka Yoshihiro, Institute of Electrical and Electronics Engineers International Meeting for Future of Electron Devices, Kansai . 2014

机译：具有硅氧烷钝化层的底门非晶Ingazno薄膜晶体管的可靠性
5. Gate-planarized and aluminum-gate fully self-aligned amorphous silicon thin-film transistors for large-area and high-resolution active matrix liquid crystal displays (AMLCDs). [D] . Kim, Joohan. 2000

机译：栅极平面化和铝栅极完全自对准的非晶硅薄膜晶体管，用于大面积和高分辨率有源矩阵液晶显示器（AMLCD）。
6. Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors [O] . Yan Zhou, Chengyuan Dong 2018

机译：钝化层对非晶InGaZnO薄膜晶体管正栅极偏置-应力稳定性的影响
7. Improved Performance of Amorphous InGaZnO Thin-Film Transistor with Ta2O5 Gate Dielectric by using La Incorporation [O] . Lai PT, Qian LX, Liu XZ, 2014

机译：用La掺入改善Ta2O5栅介质非晶InGaZnO薄膜晶体管的性能
8. Ultra-Flexible, Invisible Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends. [R] . Yu, X., Zeng, L., Zhou, N., 2015

机译：超柔性，不可见的薄膜晶体管，由非晶金属氧化物/聚合物沟道层混合物制成。

Reliability of bottom gate amorphous InGaZnO thin-film transistors with siloxane passivation layer

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