Effect of passivation films on DC characteristics of AlGaN/GaN HEMT

机译：钝化膜对AlGaN / GaN HEMT直流特性的影响

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

This paper describes results of DC characterization in AlGaN/GaN HEMTs passivated with sputter-deposited SiO2, SiN or their multilayered dielectric films. The device with SiO2 passivation exhibited low on-resistance and high breakdown voltage compared to the SiN-passivated device. However, the gate leakage current of the SiO2-passivated device was higher by one order of magnitude than that of the SiN-passivated one. The newly developed SiN/SiO2 multilayer-passivated device exhibited much improved characteristics in leakage current and breakdown voltage.

机译：本文描述了用溅射沉积的SiO2，SiN或它们的多层介电膜钝化的AlGaN / GaN HEMT中的直流表征结果。与SiN钝化的器件相比，具有SiO2钝化的器件表现出低导通电阻和高击穿电压。然而，SiO 2钝化的器件的栅极泄漏电流比SiN钝化的器件的栅极泄漏电流高一个数量级。新开发的SiN / SiO2多层钝化器件在漏电流和击穿电压方面表现出大大改善的特性。

著录项

来源
《2014 IEEE International Meeting for Future of Electron Devices, Kansai》|2014年|1-2|共2页
会议地点 Kyoto(JP)
作者
Ohi S.; Kakegami T.; Tokuda H.; Kuzuhara M.;
展开▼
作者单位

Graduate Schoo of Engineering University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Aluminum gallium nitride; Gallium nitride; HEMTs; Leakage currents; Logic gates; Passivation; Silicon compounds; AlGaN/GaN; SiN; SiOinf2/inf; passivation layer;

机译：氮化铝镓；氮化镓HEMT；漏电流；逻辑门钝化；硅化合物； AlGaN / GaN；罪; SiO 2 ;钝化层;

相似文献

外文文献
中文文献
专利

1. Examine and Interpreting the RF and DC Characteristics of AlGaN/GaN HEMT and MOS-HEMT [J] . A. B. Khan, M. Sharma, M. J. Siddiqui, Advanced Science, Engineering and Medicine . 2017,第4期

机译：检查和解释AlGaN / GaN HEMT和MOS-HEMT的RF和DC特性
2. DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600 degrees C in air [J] . Suria Ateeq J., Yalamarthy Ananth Saran, So Hongyun, Semiconductor science and technology . 2016,第11期

机译：空气中600摄氏度ALD生长的Al2O3 / AlGaN / GaN MIS-HEMT和HEMT的直流特性
3. Impact of stress in ICP-CVD SiN_xpassivation films on the leakage current in AlGaN/GaN HEMTs [J] . S.-J. Cho, X. Li, I. Guiney, Electronics Letters . 2018,第15期

机译：ICP-CVD SiN _{x 钝化膜中的应力对AlGaN / GaN HEMT中漏电流的影响}
4. Effect of passivation films on DC characteristics of AlGaN/GaN HEMT [C] . Ohi S., Kakegami T., Tokuda H., Institute of Electrical and Electronics Engineers International Meeting for Future of Electron Devices, Kansai . 2014

机译：钝化膜对AlGaN / GaN HEMT的直流特性的影响
5. Characterization of GaN thin films grown by RF Magnetron Sputtering for fabrication of an AlGaN/GaN HEMT biosensor [D] . Garza, Rocio Yolanda 2014

机译：射频磁控溅射生长的GaN薄膜的特性用于制造AlGaN / GaN HEMT生物传感器
6. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [O] . Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, 2014

机译：使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
7. Impact of stress in ICP‐CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs [O] . S.‐J. Cho, X. Li, I. Guiney, 2018

机译：ICP-CVD SIN X钝化膜对AlGaN / GaN Hemts漏电流的影响
8. Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors (HEMTs) [R] . Fitch, R. , Gillespie, J. , Jenkins, T. , 2002

机译：用于减少alGaN / GaN高电子迁移率晶体管（HEmT）中电流崩塌的表面钝化膜的比较

Effect of passivation films on DC characteristics of AlGaN/GaN HEMT

摘要

著录项

相似文献

相关主题

期刊订阅