A 56-Gb/s PAM4 InP HBT Driver IC Compensating for Nonlinearity of Extinction Curve of EAM

著录项

• 来源
  《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》|2015年|1-4|共4页
• 会议地点 New Orleans LA(US)
• 作者

  Kishi Toshiki; Nagatani Munehiko; Kanazawa Shigeru; Kobayashi Wataru; Yamazaki Hiroshi; Ida Minoru; Kurishima Kenji; Nogawa Masafumi; Kimura Shunji; Nosaka Hideyuki;

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• 作者单位

  NTT Device Technol. Labs., NTT Corp., Atsugi, Japan;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  III-V semiconductors; driver circuits; electro-optical modulation; electroabsorption; error statistics; heterojunction bipolar transistors; indium compounds; millimetre wave transistors; pulse amplitude modulation; BER; EAM; HBT technology; InP; PAM4 HBT driver IC; bit error rate; electroabsorption modulator; extinction curve; frequency 290 GHz; frequency 320 GHz; heterojunction bipolar transistors; modulation voltage swing; optical domain; optical eye openings; optical output waveform; pulse amplitude modulation; recei;

  机译：III-V类半导体;驱动器电路;电光调制;电吸收;误差统计;异质结双极晶体管;铟化合物;毫米波晶体管;脉冲幅度调制; BER; EAM; HBT技术; InP; PAM4 HBT驱动器IC;误码率；电吸收调制器；消光曲线；频率290 GHz；频率320 GHz；异质结双极型晶体管；调制电压摆幅；光学域；光学眼图张开；光学输出波形；脉冲幅度调制；接收;