III-V semiconductors; driver circuits; electro-optical modulation; electroabsorption; error statistics; heterojunction bipolar transistors; indium compounds; millimetre wave transistors; pulse amplitude modulation; BER; EAM; HBT technology; InP; PAM4 HBT driver IC; bit error rate; electroabsorption modulator; extinction curve; frequency 290 GHz; frequency 320 GHz; heterojunction bipolar transistors; modulation voltage swing; optical domain; optical eye openings; optical output waveform; pulse amplitude modulation; receiver sensitivity; Adaptive optics; Bit error rate; Integrated optics; Nonlinear optics; Optical receivers; Optical sensors; Optical transmitters;
机译:InP HBT PAM4驱动器的56 Gb / s光传输性能可补偿EAM消光曲线的非线性
机译:每个
机译:具有InP / InGaAs双HBT的12 Gbit / s激光二极管和光调制器驱动器
机译:补偿EAM消光曲线非线性的56 Gb / s PAM4 InP HBT驱动器IC
机译:InP HBT功率放大器MMIC在220GHz时可达到0.4W
机译:应变补偿的InGaAsP超晶格用于通过金属有机化学气相沉积减少在精确取向的(001)图案化Si衬底上生长的InP的缺陷
机译:基于AWG的InP PIC对56 Gb / s WDM-DPSK信号进行前置放大解调