A 70 GHz Bidirectional Front-End for a Half-Duplex Transceiver in 90-nm SiGe BiCMOS

著录项

• 来源
  《2015 IEEE Compound Semiconductor Integrated Circuit Symposium》|2015年|1-4|共4页
• 会议地点 New Orleans LA(US)
• 作者

  Kijsanayotin Tissana; Jun Li; Buckwalter James F.;

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• 作者单位

  Dept. of Electr. Comput. Eng., Univ. of California San Diego, La Jolla, CA, USA;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  BiCMOS analogue integrated circuits; Ge-Si alloys; low noise amplifiers; mixers (circuits); power amplifiers; pulse compression; radio transceivers; radiocommunication; receiving antennas; time division multiplexing; transmitting antennas; BiCMOS process; E-band; PALNA; SiGe; TDD point-to-point communication system; TX-RX antenna; bidirectional front-end transceiver circuit; bidirectional power amplifier; conversion gain; current 18 mA; frequency 70 GHz; half-duplex system; half-duplex transceiver; high frequency trans;

  机译：BiCMOS模拟集成电路; Ge-Si合金;低噪声放大器;混频器（电路）;功率放大器;脉冲压缩;无线电收发器;无线电通信;接收天线;时分复用;发射天线; BiCMOS工艺; E波段; PALNA; SiGe ; TDD点对点通信系统; TX-RX天线;双向前端收发器电路;双向功率放大器;转换增益;电流18 mA;频率70 GHz;半双工系统;半双工收发器;高频传输;