Minority carrier lifetime profile into switching analysis of IGBT through parabolic approximation

机译：通过抛物线近似将少数载流子寿命曲线纳入IGBT的开关分析

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This paper introduces a detailed study of minority carrier lifetime profile into transient anode voltage and current modeling of Non-Punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT). The minority carrier concentration has been modeled through parabolic approximation. With the new approach, an analytical model has been developed for turn-off voltage and current of IGBT in all minority carrier lifetime conditions. Consistency with the experimental results has been found compared to the previously used linear model. Finally, the implications of carrier lifetime dependence on the switching analysis are discussed.

机译：本文将对少数载流子寿命分布的详细研究引入到非穿通（NPT）绝缘栅双极晶体管（IGBT）的瞬态阳极电压和电流建模中。少数载流子浓度已通过抛物线近似建模。通过这种新方法，针对所有少数载流子寿命条件下的IGBT关断电压和电流，已经开发出了一种解析模型。与先前使用的线性模型相比，已经发现与实验结果的一致性。最后，讨论了载流子寿命对转换分析的影响。

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来源
《2016 5th International Conference on Informatics, Electronics and Vision》|2016年|235-240|共6页
会议地点 Dhaka(BD)
作者
Avijit Das; Md. Nazmul Islam; Md. Masud-ul Haq; Md. Ziaur Rahman Khan;
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作者单位

Dept of EEE, Bangladesh University of Engineering Technology;

Dept of EEE, Bangladesh University of Engineering Technology;

Dept of EEE, Bangladesh University of Engineering Technology;

Dept of EEE, Bangladesh University of Engineering Technology;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Charge carrier lifetime; Transient analysis; Anodes; Insulated gate bipolar transistors; Switches; Mathematical model; Data models;

机译：电荷载流子寿命;瞬态分析;阳极;绝缘栅双极型晶体管;开关;数学模型;数据模型;

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专利

1. Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs [J] . Takeuchi Kiyoshi, Fukui Munetoshi, Saraya Takuya, IEEE Transactions on Semiconductor Manufacturing . 2020,第2期

机译：双极晶体管测试结构，用于在IGBT中提取少数群体寿命
2. Effect of deep levels and interface states on the minority carrier lifetime control of trench-IGBTs by electron irradiation [J] . Nakabayashi M, Ohyama H, Shitogiden H, Physica, B. Condensed Matter . 2006,第0期

机译：深水平和界面态对电子辐照控制沟槽式IGBT少数载流子寿命的影响
3. Perimeter Governed Minority Carrier Lifetimes in 4H-SiC Diodes Measured by Reverse Recovery Switching Transient Analysis [J] . PHILIP G. NEUDECK Journal of Electronic Materials . 1998,第1a6期

机译：通过反向恢复开关瞬态分析测量4H-SiC二极管的周边控制少数载流子寿命
4. Minority carrier lifetime profile into switching analysis of IGBT through parabolic approximation [C] . Avijit Das, Md. Nazmul Islam, Md. Masud-ul Haq, International Conference on Informatics, Electronics and Vision . 2016

机译：少数型载体寿命谱通过抛物线近似的IGBT切换分析
5. Empirical correlation of minority carrier lifetime to defect density profile in germanium on silicon heteroepitaxy. [D] . Sheng, Josephine Juin-Jye. 2013

机译：硅上异质外延的锗中少数载流子寿命与缺陷密度分布的经验相关性。
6. Minority Carrier Lifetime Measurements for Contactless Oxidation Process Characterization and Furnace Profiling [O] . Christian Bscheid, Christian R. Engst, Ignaz Eisele, 2019

机译：用于非接触氧化过程表征和炉分析的少数载流子寿命测量
7. Quantitative analysis of copper contamination in silicon by surface photovoltage minority carrier lifetime analysis [O] . Deepak A. Ramappa 2001

机译：表面光电少数载体寿命分析定量分析硅中硅污染
8. Mathematical Analysis of the Photovoltage Decay (PVD) Method for Minority Carrier Lifetime Measurements [R] . Vonroos, O. H. 1982

机译：少数载体寿命测量的光电压衰减（pVD）方法的数学分析

Minority carrier lifetime profile into switching analysis of IGBT through parabolic approximation

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