• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>2016 COES annual conference proceedings >Design of a High-Density, Diode-Less 1.2 kV, 90 A SiC MOSFET Half-Bridge Power Module
【24h】

Design of a High-Density, Diode-Less 1.2 kV, 90 A SiC MOSFET Half-Bridge Power Module

机译：高密度，少二极管，1.2 kV，90 A SiC MOSFET半桥功率模块的设计

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

SiC devices with current ratings close to 100 A per chip have recently been released. These devices decrease the number of paralleled die needed in high-current power modules, thus increasing power density. By utilizing these devices in synchronous operation with the body diode used for dead time commutation, the external antiparallel diode can be eliminated. This mode reduces cost, and further increases the power density without sacrificing efficiency. In this work, a 1.2 kV, 90 A diode-less SiC MOSFET half-bridge module was designed, fabricated and tested. A survey of packaging materials and technologies was conducted, and the selections were based on the tradeoff between cost and performance. The fabricated module has low gate- and power-loop parasitic inductances (3 and 2.4 nH, respectively), and has more than twice the power density (7.8 W/mm3) and less than half of the switching loss (1.3 mJ) as similarly rated commercial half-bridge modules.
机译：最近发布了额定电流接近每芯片100 A的SiC器件。这些器件减少了大电流电源模块中所需的并行管芯数量，从而提高了功率密度。通过将这些器件与用于死区换相的体二极管同步运行，可以消除外部反并联二极管。该模式降低了成本，并在不牺牲效率的情况下进一步提高了功率密度。在这项工作中，设计，制造和测试了一个1.2 kV，90 A的无二极管SiC MOSFET半桥模块。对包装材料和技术进行了调查，选择的依据是成本和性能之间的权衡。制成的模块具有低栅极和功率环路寄生电感（分别为3和2.4 nH），并且功率密度（7.8 W / mm3）的两倍以上，并且开关损耗（1.3 mJ）的一半以下额定的商用半桥模块。

著录项

  • 来源
  • 会议地点 Blacksburg VA(US)
  • 作者

    Christina DiMarino; Wenli Zhang; Rolando Burgos; Dushan Boroyevich;

  • 作者单位

    Center for Power Electronics SystemsThe Bradley Department of Electrical and Computer EngineeringVirginia Polytechnic Institute and State UniversityBlacksburg, VA 24061 USA;

    Center for Power Electronics SystemsThe Bradley Department of Electrical and Computer EngineeringVirginia Polytechnic Institute and State UniversityBlacksburg, VA 24061 USA;

    Center for Power Electronics SystemsThe Bradley Department of Electrical and Computer EngineeringVirginia Polytechnic Institute and State UniversityBlacksburg, VA 24061 USA;

    Center for Power Electronics SystemsThe Bradley Department of Electrical and Computer EngineeringVirginia Polytechnic Institute and State UniversityBlacksburg, VA 24061 USA;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号