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首页> 外文会议>2016 IEEE/ACES International Conference on Wireless Information Technology and Systems and Applied Computational Electromagnetics >Improved surface impedance absorbing boundary for FDTD method
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Improved surface impedance absorbing boundary for FDTD method

机译：FDTD方法的改进的表面阻抗吸收边界

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摘要

An improved absorbing boundary condition for terminating finite-difference time-domain (FDTD) simulations, based on the surface impedance concept, is proposed in this paper. The improved method uses E component collocation instead of the H component collocation as in [1]. The performance of the two SIABCs and 10-layers CPML are discussed with a 3D example which employed these absorbing boundary conditions (ABCs) in the calculation of RCS of a dielectric sphere. The computer resources requirements are also discussed. The compared result indicates that both the SIABCs have a comparable absorbing performance with 10-layers CPML, and the E component collocated SIABC has a better absorbing performance relative to H component collocated SIABC.
机译：提出了一种改进的吸收边界条件，用于基于表面阻抗概念的有限差分时域（FDTD）终止仿真。改进的方法使用E分量配置代替了[1]中的H分量配置。通过一个3D实例讨论了两个SIABC和10层CPML的性能，该实例在计算介电球的RCS时采用了这些吸收边界条件（ABC）。还讨论了计算机资源需求。比较结果表明，两种SIABC的吸收性能均与10层CPML相当，并且与H组分并存的SIABC相比，E组分并存的SIABC具有更好的吸收性能。

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