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Process for characterizing and improving defect-adhered boundary surfaces in heterostructures on silicon comprises inserting foreign atoms into the heterostructure and detecting by a deep profiling process as boundary surface accumulation
Process for characterizing and improving defect-adhered boundary surfaces in heterostructures on silicon comprises inserting foreign atoms into the heterostructure and detecting by a deep profiling process as boundary surface accumulation
Process for characterizing and improving defect-adhered boundary surfaces in SixGeyC1-x-y heterostructures on Si (where 0 = x, y = 1) comprises inserting foreign atoms into the heterostructure which are segregated after diffusion during the course of thermal processes on defect-adhered boundary surfaces and are detected by a deep profiling process as boundary surface accumulation. An Independent claim is also included for an integrated circuit prepared by utilizing the process for improving defect-adhered boundary surfaces in SixGeyC1-x-y heterostructures on silicon. Preferred Features: The foreign atoms are fluorine or chlorine or other electrically inactive and quickly diffusing foreign atoms.
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