The effect of mole-fraction on power spectral density of single quantum well based InxGa1-xN/GaN blue light emitting diode

著录项

• 来源
  《2016 International Conference on Microelectronics, Computing and Communications》|2016年|1-3|共3页
• 会议地点 Durgapur(IN)
• 作者

  Ashish Prajapati; Pritam Dey; T. D. Das;

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• 作者单位

  Department of Electronics and Communication Engineering, National Institute of Technology, Arunachal Pradesh, India;

  Department of Electronics and Communication Engineering, National Institute of Technology, Arunachal Pradesh, India;

  Department of Electronics and Communication Engineering, National Institute of Technology, Arunachal Pradesh, India;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Anodes; Light emitting diodes; Indium; Gallium nitride; Power generation; Radiative recombination; Lattices;

  机译：阳极;发光二极管;铟;氮化镓;发电;辐射复合;晶格;