Drain current modeling of gallium nitride schottky barrier MOSFETs

机译：氮化镓肖特基势垒MOSFET的漏极电流建模

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The drain current of the Schottky barrier (SB) MOSFET is modeled mathematically by considering both thermionic emissions and Schottky barrier tunneling from the source to the channel. The drain current is dependent on the Schottky barrier height, but is barely affected by the doping concentration. For the depletion type gallium nitride SB MOSFET with both an ITO source and drain electrodes, the threshold voltage is calculated to be 3.5 V, which is similar to the measured value of 3.75 V, and the calculated drain current is 1.2 times higher than the measured value.

机译：肖特基势垒（SB）MOSFET的漏极电流在数学上建模，同时考虑了热离子发射和从源极到沟道的肖特基势垒隧穿。漏极电流取决于肖特基势垒高度，但几乎不受掺杂浓度的影响。对于同时具有ITO源极和漏极的耗尽型氮化镓SB MOSFET，计算出的阈值电压为3.5 V，这与测量值3.75 V相似，并且计算出的漏极电流是测量值的1.2倍值。

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来源
《2017 15th International Conference on Quality in Research : International Symposium on Electrical and Computer Engineering》|2017年|497-500|共4页
会议地点 Nusa Dua(ID)
作者
Jeong-Hoon Seol; Sung-Ho Hahm;
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作者单位

School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Daegu, 702-701, Korea;

School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Daegu, 702-701, Korea;

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原文格式 PDF
正文语种 eng
中图分类
关键词
MOSFET; Gallium nitride; Tunneling; Schottky barriers; Mathematical model; Thermionic emission; Substrates;

机译：MOSFET;氮化镓;隧道效应;肖特基势垒;数学模型;热电子发射;衬底;;

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专利

1. Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction [J] . Shiyang Zhu, M.F. Li Solid-State Electronics . 2006,第7a8期

机译：通过降低肖特基势垒高度来改善具有应变硅沟道的肖特基势垒源极/漏极MOSFET的可驱动性
2. Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs [J] . Peicheng Li, Guangxi Hu, Ran Liu, Microelectronics journal . 2011,第10期

机译：双栅极肖特基势垒源极/漏极MOSFET的电势和阈值电压模型
3. Multiscale modeling of Schottky-barrier MOSFETs with disilicide source/drain contacts: Role of contacts in the carrier injection [J] . M. Dubois, D. Jimenez, P. L. de Andres, Physical review . 2007,第11期

机译：具有二硅化物源极/漏极触点的肖特基势垒MOSFET的多尺度建模：触点在载流子注入中的作用
4. Drain current modeling of gallium nitride schottky barrier MOSFETs [C] . Jeong-Hoon Seol, Sung-Ho Hahm International Conference on Quality in Research . 2017

机译：含氮化镓肖特基屏障MOSFET的电流建模
5. Advanced Source Injector for N-type Enhancement-Mode Gallium Nitride-based Schottky Barrier MOSFET with Source/Drain Extension [D] . Park, Jaehoon 2010

机译：用于具有源/漏扩展的N型增强型氮化镓基肖特基势垒MOSFET的高级源极注入器
6. A quasi-ballistic drain current charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime [O] . Vyas R. Murnal, C. Vijaya 2019

机译：具有位置载流子散射相关性的准弹道漏电流电荷和电容模型对纳米级对称DG MOSFET有效
7. A Compact Model for Undoped Silicon-Nanowire MOSFETs With Schottky-Barrier Source/Drain [O] . Guojun Zhu, Student Member, Xing Zhou, 2013

机译：具有肖特基势垒源极/漏极的未掺杂硅纳米线MOSFET的紧凑模型

Drain current modeling of gallium nitride schottky barrier MOSFETs

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