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首页> 外文会议>2017 15th International Conference on Quality in Research : International Symposium on Electrical and Computer Engineering >Bifacial heterojunction intrinsic thin layer solar cells as a bioFET supply
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Bifacial heterojunction intrinsic thin layer solar cells as a bioFET supply

机译：双面异质结本征薄层太阳能电池作为bioFET的供应

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Solar cells design as an independent supply for biosensor Field Effect Transistor (bioFET) is required to overcome electricity supply. Integrating bioFET with solar cells generates some benefits that include efficiency, low costs, and environmental friendly. In the design of solar cells, the bifacial structure of Hetero-junction Intrinsic Thin layer (HIT) was selected, and the optimization on the structure was carried out with the help of AFORS-HET software. The optimization of such a structure was undertaken by laying the intrinsic thin layers on both sides of the substrate or Transparent Conductive Oxides (TCO) that were placed on the front and back sides of the cell. In order to minimize the recombination, a back-surface field (BSF) was also put in the rear cell of the structure. Research on bifacial HIT structure needs to be done to select a solar cells structure that is most suitable with the voltage required by the bioFET. There are five structures modeling had done to have suitable structure using AFORS-HET. The entire five structures had been simulated on equilibrium mode, and they generally have shown to possess a band alignment type II, namely staggered heterojunction. The simulation results in equilibrium mode obtained one structure which the smallest ΔEC and ΔEV among the other four structures, that is TCO / a-Si:H(p) / a-Si:H(i) / c-Si(n) / a-Si:H(i) / a-Si:H(n+) / TCO / Al with ΔEC and ΔEV, 0.15006798 eV and 0.445920 eV respectively. This 2nd structure also has a smallest barrier in ΦBn= 0.6791392 eV and ΦBp= 0.08314 eV, respectively. The built-in potential of the 2nd structure is 1.13 V. This structure has JSC=0.083 A/cm2 and VOC = 0.313 V. The deviation between built-in potential and VOC is realize in 0.817. The maximum current and maximum voltage are Jm = 0,076 A/cm2 and Vm = 0,25 V respectively, so the maximum power of this structure is 0.019 Watt/cm2. Therefore the 2nd structure is the most appropriate structure to fulfill the bioFET supply.
机译：为了克服电力供应，需要将太阳能电池设计为生物传感器场效应晶体管（bioFET）的独立电源。将bioFET与太阳能电池集成会带来一些好处，包括效率，低成本和环保。在太阳能电池的设计中，选择了异质结本征薄层（HIT）的双面结构，并借助AFORS-HET软件对结构进行了优化。这种结构的优化是通过在基板的两侧或透明导电氧化物（TCO）的两侧上放置本征薄层进行的，而透明导电氧化物被放置在电池的正面和背面。为了最小化重组，还在结构的后单元中放置了一个背面电场（BSF）。需要进行双面HIT结构的研究，以选择最适合bioFET所需电压的太阳能电池结构。使用AFORS-HET进行了五种结构建模，以具有合适的结构。整个五种结构均已在平衡模式下进行了模拟，通常显示它们具有II型能带排列，即交错的异质结。在平衡模式下的仿真结果获得了一种结构，其中其他四个结构中的ΔEC和ΔEV最小，即TCO / a-Si：H（p）/ a-Si：H（i）/ c-Si（n）/ a-Si：H（i）/ a-Si：H（n + ）/ TCO / Al的ΔEC和ΔEV分别为0.15006798 eV和0.445920 eV。该2 nd 结构在Φ Bn = 0.6791392 eV和Φ Bp = 0.08314 eV时也分别具有最小的势垒。 2 nd 结构的内置电势为1.13V。此结构的J SC = 0.083 A / cm 2 和V OC = 0.313V。内置电势与V OC 之间的偏差在0.817中实现。最大电流和最大电压分别为J m = 0,076 A / cm 2 和V m = 0,25 V，因此最大功率该结构的强度为0.019瓦/厘米 2 。因此，2 nd 结构是满足bioFET供应最合适的结构。

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