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首页> 外文期刊>Moscow University Physics Bulletin >Photoluminescence of a-Si/c-Si Heterojunction Solar Cells with Different Intrinsic Thin Layers
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Photoluminescence of a-Si/c-Si Heterojunction Solar Cells with Different Intrinsic Thin Layers

机译:具有不同内在薄层的A-Si / C-Si异质结太阳能电池的光致发光

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摘要

The photoluminescence of two types of heterostructural silicon solar cells with different passivation of crystalline silicon layer was studied. The contributions of various processes to the photoluminescence are revealed by measuring the photoluminescence at low temperatures. It is shown that the dopant concentration in crystalline silicon for solar cells based on an amorphous silicon/crystalline silicon heterojunction can be estimated from photoluminescence spectra. The correlation between the photoluminescence kinetics of heterostructural silicon solar cells and the photoconversion efficiency is established. An effective method to determine the quality of surface doping in crystalline silicon solar cells based on an amorphous silicon/crystalline silicon heterojunction is proposed.
机译:研究了两种类型的异质结构硅太阳能电池具有不同钝化晶体层的光致发光。 通过测量低温下的光致发光来揭示各种方法对光致发光的贡献。 结果表明,基于非晶硅/晶体硅杂核杂交的太阳能电池晶体硅中的掺杂剂浓度可以从光致发光光谱估计。 建立了异质结构硅太阳能电池的光致发光动力学与光电转换效率之间的相关性。 提出了基于非晶硅/晶体异质结的晶体硅太阳能电池中掺杂表面掺杂的有效方法。

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