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首页> 外文会议>2017 32nd Symposium on Microelectronics Technology and Devices >The influence of aluminum incorporation on the structural and electrical properties of ZnO thin films for applications in piezoresistive sensors
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The influence of aluminum incorporation on the structural and electrical properties of ZnO thin films for applications in piezoresistive sensors

机译：铝的掺入对压阻传感器中ZnO薄膜的结构和电性能的影响

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摘要

Zinc oxide thin films have high resistivity, plus thermal and chemical stability. Such properties make this material suitable for fabrication of piezo-electric sensors and surface acoustic wave devices that are used in Microelectromechanical systems (MEMS). The addition of metallic nanoparticles into the film matrix can reduce the value of resistivity, and, thus, qualify the material to be used in piezoresistive devices. In this work, a dc magnetron co-sputtering was used to grow Al doped ZnO (AZO) films with different applied voltages in the Al target, deposited on Si (100) p-type substrates with a layer of 1 micron of SiO2 by thermal oxidation. The microstructure and chemical composition of the films were characterized by X-ray diffraction and Rutterford-Backscattering techniques, respectively. The RBS results indicate the presence of aluminum, zinc, and oxygen in the films, which was confirmed by the XRD peaks of ZnO (002) at 2θ=34.4° Four probe technique confirmed a gradual reduction of resistivity up to 8.10-3 Ω.cm as the applied power on the Al-target increased.
机译：氧化锌薄膜具有高电阻率，以及热稳定性和化学稳定性。此类特性使该材料适用于制造微机电系统（MEMS）中的压电传感器和声表面波器件。将金属纳米颗粒添加到薄膜基质中可以降低电阻率的值，因此可以使压阻设备中使用的材料合格。在这项工作中，使用直流磁控管共溅射在Al靶材中生长具有不同施加电压的Al掺杂ZnO（AZO）膜，该膜沉积在具有1微米SiO 2 通过热氧化。分别通过X射线衍射和Rutterford-反向散射技术表征了薄膜的微观结构和化学组成。 RBS结果表明膜中存在铝，锌和氧，这已通过在2θ= 34.4°处的ZnO（002）的XRD峰得到证实。四探针技术证实了电阻率逐渐降低至8.10s- 3 Ω.cm随着在Al目标上施加的功率增加。

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