Ni/Al2O3/4H-SiC Schottky diodes

机译：Ni / Al 2 O 3 / 4H-SiC肖特基二极管

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Metal-Insulator-Semiconductor Schottky diodes were fabricated on SiC, as a potential use for particle detectors. Nickel was used as Schottky and back ohmic contacts. The dielectric Al₂O₃ was investigated as insulating layer and deposited by Atomic Layer Deposition, with thicknesses of 1, 2 and 4 nm. Current-Voltage curves were extracted from the diodes, varying the measurement temperature (297 K-373 K). Apparent and real Schottky Barrier Heights (SBH), ideality factors η and insulating layer thicknesses were extracted from the I-V curves. Thicker insulating layers produce higher η and reduce the real SBH value. An interfacial layer of silicon oxycarbide with thickness of 0.2 nm was estimated for the diodes. The real SBH goes from 1.32 V to 0.87 V for thicknesses of 1 nm and 2 nm of Al₂O₃, respectively. The diode with 4 nm of Al₂O₃ has not presented Schottky characteristics. The reverse currents for the diodes are in the range of hundreds of pA, making them suitable for particle detectors. We also show an application of the MIS structure to be used as He⁺⁺ particle detector in Rutherford Backscattering Spectroscopy experiment.

机译：金属-绝缘体-半导体肖特基二极管是在SiC上制造的，可作为粒子探测器的潜在用途。镍用作肖特基和背面欧姆接触。研究了电介质Al _{2 O _{3 作为绝缘层，并通过原子层沉积法沉积，厚度为1、2和4 nm。从二极管提取电流-电压曲线，从而改变测量温度（297 K-373 K）。从I-V曲线中提取了表观和实际的肖特基势垒高度（SBH），理想系数η和绝缘层厚度。较厚的绝缘层产生较高的η，并降低实际SBH值。估计二极管的厚度为0.2 nm的碳氧化硅界面层。当Al _{2 O _{3 的厚度分别为1 nm和2 nm时，实际的SBH从1.32 V变为0.87V。 Al _{2 O _{3 的4 nm二极管没有肖特基特性。二极管的反向电流在数百pA的范围内，使其适合于粒子探测器。我们还展示了MIS结构在Rutherford背散射光谱实验中用作He ^{++ 粒子检测器的应用。}}}}}}}

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来源
《2017 32nd Symposium on Microelectronics Technology and Devices》|2017年|1-4|共4页
会议地点 Fortaleza(BR)
作者
Ivan R. Kaufmann; Ana C. Pick; Marcelo B. Pereira; Henri I. Boudinov;
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作者单位

PGMICRO, Universidade Federal do Rio Grande do Sul, Porto Alegre, Brazil;

Instituto de Física, Universidade Federal do Rio Grande do Sul Porto, Alegre, Brazil;

Instituto de Física, Universidade Federal do Rio Grande do Sul Porto, Alegre, Brazil;

Instituto de Física, Universidade Federal do Rio Grande do Sul Porto, Alegre, Brazil;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Schottky diodes; Temperature measurement; Silicon carbide; Aluminum oxide; Detectors; Schottky barriers; Mathematical model;

机译：肖特基二极管温度测量碳化硅氧化铝探测器肖特基势垒数学模型;

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Ni/Al2O3/4H-SiC Schottky diodes

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