• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>2017 Conference on Lasers and Electro-Optics Europe amp; European Quantum Electronics Conference >Refractive index engineering in monolithic crystalline silicon with nanosecond laser pulses
【24h】

Refractive index engineering in monolithic crystalline silicon with nanosecond laser pulses

机译：纳秒激光脉冲在单晶硅中的折射率工程

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Since the advent of waveguide writing in glasses with femtosecond lasers more than two decades ago [1], this three-dimensional (3D) refractive index engineering technique has increasingly evolved offering performances that are suitable for many applications (telecommunications, design of optical components, etc.). However, this method has no equivalent in silicon so far, representing a technological lock for further applications (e.g. ultrafast microelectronics, quantum computing, sensors). The origin of this limitation has been explained only recently by significant plasma effects which are inevitable for ultrashort laser pulses focused in the bulk of silicon [2]. To overcome these, studies have recently shed light on the possibility of modifying the crystalline phase of silicon with nanosecond pulses [3]. Thus, it is worth investigating the potential of this regime for refractive index engineering in this material.
机译：自二十多年前使用飞秒激光在玻璃中进行波导写入[1]以来，这种三维（3D）折射率工程技术已经得到了不断发展，其性能可满足许多应用（电信，光学组件设计，等等。）。但是，到目前为止，该方法在硅中尚无等效技术，代表了进一步应用（例如超快微电子，量子计算，传感器）的技术锁。仅在最近才通过显着的等离子体效应解释了这种限制的根源，这对于聚焦在大部分硅中的超短激光脉冲是不可避免的[2]。为了克服这些问题，最近的研究揭示了用纳秒级脉冲改变硅的结晶相的可能性[3]。因此，值得研究此方案在这种材料中进行折射率工程的潜力。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号