ESD protection and driving capability switch control circuits for large array NMOSFET driving devices

机译：大型NMOSFET驱动器件的ESD保护和驱动能力开关控制电路

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Since large array devices of MOSFETs are huge for driving capabilities, ESD self protections are also required. Then, the large drain-contact-to-poly-gate-spacing layout rule is usually adopted with large layout areas. In this paper, a new control circuit is implemented for adopting the minimum device layout rule in the LAD. Hence, it results in a very small layout area and ESD self-protection capabilities can be established.

机译：由于MOSFET的大型阵列器件具有巨大的驱动能力，因此还需要ESD自保护。然后，通常在大的布局区域中采用大的漏极接触到多晶硅栅间距的布局规则。本文采用了一种新的控制电路，以在LAD中采用最小的器件布局规则。因此，这导致非常小的布局面积，并且可以建立ESD自保护功能。

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来源
《2017 International Conference on Electron Devices and Solid-State Circuits》|2017年|1-2|共2页
会议地点 Hsinchu(CN)
作者
Hung-Wei Chen; Shao-Chang Huang; Mi-Chang Chang; Jen-Hang Yang; Tingyou Lin;
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作者单位

Institute of Electronics Engineering, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan;

Vanguard International Semiconductor Corporation, Hsinchu, Taiwan;

Institute of Electronics Engineering, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan;

Institute of Electronics Engineering, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan;

Vanguard International Semiconductor Corporation, Hsinchu, Taiwan;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Electrostatic discharges; Logic gates; MOSFET; Layout; MOSFET circuits; Performance evaluation; Robustness;

机译：静电放电;逻辑门; MOSFET;布局; MOSFET电路;性能评估;坚固性;;

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专利

1. Improving ESD protection of 5 V NMOSFET large array device in 0.4 μm BCD process [J] . Huang Shao-Chang, Chen Hung-Wei, Yang Jen-Hang, Microelectronics & Reliability . 2018,第MAY期

机译：在0.4μmBCD工艺中改善5 V NMOSFET大型阵列器件的ESD保护
2. An atom-switch-based field-programmable gate array with optimized driving capability buffer [J] . Bai Xu, Miyamura Makoto, Nebashi Ryusuke, Japanese journal of applied physics . 2019,第SB期

机译：具有优化驱动能力缓冲器的基于原子开关的现场可编程门阵列
3. Improving the ESD self-protection capability of 60 V HV p-channel LDMOS large array device in 0.25 mu m BCD process [J] . Chen Hung-Wei, Chang Mi-Chang Microelectronics & Reliability . 2017,第jula期

机译：在0.25μmBCD工艺中提高60 V HV p沟道LDMOS大型阵列器件的ESD自保护能力
4. ESD protection and driving capability switch control circuits for large array NMOSFET driving devices [C] . Hung-Wei Chen, Shao-Chang Huang, Mi-Chang Chang, IEEE International Conference on Electron Devices and Solid-State Circuits . 2017

机译：用于大型阵列NMOSFET驱动装置的ESD保护和驱动能力开关控制电路
5. Design, characterization and compact modeling of novel silicon controlled rectifier (SCR)-based devices for electrostatic discharge (ESD) protection applications in integrated circuits. [D] . Lou, Lifang. 2008

机译：新型基于硅的可控整流器（SCR）的器件的设计，表征和紧凑模型，用于集成电路中的静电放电（ESD）保护应用。
6. Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications [O] . Chao-Tsung Ma, Zhen-Huang Gu 2021

机译：用于中频到高功率应用的宽带隙半导体开关装置的驱动电路综述
7. Analysis of switched-capacitor circuits using driving-point signal-flow graphs [O] . Hanspeter Schmid, Alex Huber 2018

机译：使用驱动点信号流图分析开关电容器电路
8. Digital memory in which the driving of each word location is controlled by a switch core Patent [R] . Zottarelli, L. J. 1969

机译：数字存储器，其中每个字位置的驱动由开关核心专利控制

ESD protection and driving capability switch control circuits for large array NMOSFET driving devices

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