首页> 外文会议>2017 International Conference on Engineering Technology and Technopreneurship >Role of strain and oxygen vacancies in modifying the transition temperature of VO2 films deposited via Rf biased sputtering
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Role of strain and oxygen vacancies in modifying the transition temperature of VO2 films deposited via Rf biased sputtering

机译:应变和氧空位在改变通过Rf偏压溅射沉积的VO2薄膜的转变温度中的作用

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Rf substrate biasing method was observed to succeed in controlling the transition temperature (Timt) while maintaining of almost two-order of magnitude transition in resistance changes, and also the hysteresis loops, indicating the intrinsic IMT properties of VO2 films. The lowest Tt of 36°C was achieved in the film deposited at 40 W. Asymmetrical XRD measurements revealed modifications of the aM/2 lattice length (strained aM-axis) in the VO2 films deposited via rf biased sputtering. The in-plane compressive stress results in the shortening of the in-plane aM-axis, hence give modifications of the Tt towards lower temperature, respectively. XPS spectra revealed that an energetic ion bombardment also results in an introduction of oxygen vacancies, which thus give significant effect in lowering the Timt, respectively. Characterization of the strain along cr (aM/2)-axis vs. transition temperature characteristics revealed that the TIMT modifications in films deposited by reactive sputtering with substrate biasing are understood to be mainly triggered by the compression of the in-plane aM/2 (cR)-axis for films deposited with ion energy up to around 230 eV (≤30 W). However, Timt modifications for films deposited with ion energy larger than 230 eV (> 30 W) result by a collaboration of strain compression along the aM-axis and oxygen vacancies. The orientation of aM-axis in parallel to the substrate has allowed the Timt modifications controlled.
机译:观察到Rf衬底偏置方法成功地控制了转变温度(T imt ),同时保持了电阻变化的几乎两个数量级的转变以及磁滞回线,这表明了If的固有IMT特性。 VO 2 电影。在40 W下沉积的薄膜中实现了最低的36°C T t 。XRD不对称测量显示a M / 2晶格长度(应变aM轴)发生了变化)在通过射频偏压溅射沉积的VO 2 膜中。面内压缩应力导致面内a M 轴的缩短,因此分别使T t 向较低温度方向变化。 XPS光谱表明,高能离子轰击还会导致引入氧空位,从而分别显着降低T imt 。沿cr(a M / 2)轴的应变对转变温度特性的表征表明,可以理解通过反应性溅射和衬底偏置沉积的薄膜中的T IMT 修饰对于沉积离子能量高达230 eV(≤30W)的薄膜,其主要是由于面内 M / 2(cR)轴的压缩而触发的。然而,离子能量大于230 eV(> 30 W)沉积的薄膜的T imt 修饰是沿着a M 轴的应变压缩和氧空位共同作用的结果。平行于基板的 M 轴的方向允许控制T imt 的修饰。

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