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首页> 外文会议>2018 76th Device Research Conference >Realization of the First GaN Based Tunnel Field-Effect Transistor
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Realization of the First GaN Based Tunnel Field-Effect Transistor

机译：第一个基于GaN的隧道场效应晶体管的实现

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Tunnel field-effect transistors (TFETs) offer the means to surpass the subthreshold swing (SS) limit of 60 mV/dec that limits MOSFETs. While MOSFETs rely on modulating a potential barrier, which is subject to a Boltzmann tail in the density of states (DOS), interband tunneling in TFETs enables a sharp turn off of the DOS because the transport is no longer governed by an exponential tail of carriers. These devices have been investigated in Si & III-V material systemsn1n, achieving SS's as low as 20 mV/decn2n. GaN is advantageous to these other material systems because its large bandgap is ideal for suppressing leakage current. Unfortunately impurity doping in GaN alone is not enough to achieve the internal fields required to promote interband tunneling[Fig l(a)]. However, by taking advantage of the difference in polarization fields between InGaN and GaN, a device structure favoring interband tunneling can be made [Fig l(b)]. Li et. al.n3nhave theoretically predicted that a GaN heterojunction TFET could obtain an SS of 15 mV/dec and a peak current ofn$1times 10^{-4} mathrm{A}/mu mathrm{m}$n. For the work being presented, GaN TFETs were fabricated using a surrounding gate (SG) architecture utilizing both nanowires and fins formed from a top-down approach.
机译：隧道场效应晶体管（TFET）提供了超过60 mV / dec的亚阈值摆幅（SS）限制的方法，该限制限制了MOSFET。尽管MOSFET依赖于调制势垒，而势垒受态密度（DOS）的玻耳兹曼尾巴影响，但TFET中的带间隧穿能够使DOS急剧关断，因为传输不再受载子的指数尾巴支配。这些设备已在Si＆III-V材料系统中进行了研究。n 1 n，实现SS低至20 mV / decn 2n。 GaN对这些其他材料系统具有优势，因为它的大带隙非常适合抑制泄漏电流。不幸的是，仅在GaN中掺杂杂质不足以实现促进带间隧穿所需的内部场[图1（a）]。但是，通过利用InGaN和GaN之间极化场的差异，可以制造出一种有利于带间隧穿的器件结构[图1（b）]。李等al.n 3 n从理论上预测GaN异质结TFET可获得的SS为15 mV / dec，峰值电流为n $1乘以10 ^ {-4} mathrm {A} / mu mathrm {m} $ n。对于目前的工作，GaN TFET是使用环绕栅（SG）架构制造的，该架构利用了纳米线和由上而下形成的鳍片。

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