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首页> 外文会议>2018 76th Device Research Conference >A Vacuum Multi-Finger Transistor in CMOS Technology
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A Vacuum Multi-Finger Transistor in CMOS Technology

机译：CMOS技术的真空多指晶体管

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摘要

Electron filed emission is the process of emission of electrons from a conductor into the vacuum by means of an applied electric field and has a wide range of applications such as displays, electron guns, scanning electron microscopes, high power microwave amplifiers and micro- and nano-vacuum tubes. Vacuum electronic technology became obsolete by its poor reliability characteristics compared to semiconductor technologies. On the other hand, electrons in vacuum can accelerate to close to the speed of light, leading to potentially ultra-high speed devices if the gap between the emitting electrode (Cathode) and an opposing electrode (Anode) is very small (nanometer scale). In such nano-vacuum transistors [1]–[3], fabrication simplicity and reproducibility, high current density, good reliability characteristics and low cost fabrication are of prime importance. In this paper, a high density array of metallic nano-emitters are designed in a standard 45 nm CMOS technology, and are then post-processed using a simple one-step dry etching technology. No lithography is used in the post-CMOS fabrication. Field emission characteristics of the vacuum transistors have been measured. These devices show well-behaved transistor characteristics and are very promising for low-power high-speed applications.
机译：电子场发射是通过施加的电场将电子从导体发射到真空中的过程，具有广泛的应用，例如显示器，电子枪，扫描电子显微镜，大功率微波放大器以及微米和纳米-真空管。与半导体技术相比，真空电子技术因其较差的可靠性而变得过时。另一方面，如果发射电极（阴极）和对电极（阳极）之间的间隙很小（纳米级），真空中的电子可以加速以接近光速，从而导致潜在的超高速设备。 。在这种纳米真空晶体管[1]-[3]中，制造的简便性和可重复性，高电流密度，良好的可靠性和低成本制造至关重要。在本文中，采用标准的45 nm CMOS技术设计了高密度的金属纳米发射体阵列，然后使用简单的一步干法蚀刻技术对其进行后处理。后CMOS制造中不使用光刻技术。已经测量了真空晶体管的场发射特性。这些器件表现出良好的晶体管特性，对于低功耗高速应用非常有前途。

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