To meet the requirements of millimeter wave circuits for high-current and high cutoff-frequency devices.a com-pact 4-finger InGaAs/InP single heterostructure bipolar transistor(HBT)was designed and fabricated successfully by using planarization technology.The results show that the width of the emitter fingers is as small as lμm,the high Kirk current of 4-finger HBT reaches 110wA,and the current gain cutoff frequency is as high as 176GHz.The device is promising on the applications in the medium-power circuits operating at millimeter-wave range.%针对毫米波电路对大电流、高截止频率器件的要求,利用平坦化技术,设计并制作成功了结构紧凑的四指合成InGaAs/InP异质结双极晶体管.实验结果表明发射极的宽度可减小到1μm.Kirk电流可达到110wA,电流增益截止频率达到176GI-Iz.这种器件有望在中等功率的毫米波电路中有所应用.
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