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The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures

机译：深能级陷阱及其对InP / InGaAs异质结构电流特性影响的研究

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摘要

The damage mechanism of proton irradiation in InP/InGaAs heterostructures was studied. The deep level traps were investigated in detail by deep level transient spectroscopy (DLTS), capacitance–voltage (C–V) measurements and SRIM (the stopping and range of ions in matter, Monte Carlo code) simulation for non-irradiated and 3 MeV proton-irradiated samples at a fluence of 5 × 1012 p/cm2. Compared with non-irradiated samples, a new electron trap at EC-0.37 eV was measured by DLTS in post-irradiated samples and was found to be closer to the center of the forbidden band. The trap concentration in bulk, the interface trap charge density and the electron capture cross-section were 4 × 1015 cm−3, 1.8 × 1012 cm−2, and 9.61 × 10−15 cm2, respectively. The deep level trap, acting as a recombination center, resulted in a large recombination current at a lower forward bias and made the forward current increase in InP/InGaAs heterostructures for post-irradiated samples. When the deep level trap parameters were added into the technology computer-aided design (TCAD) simulation tool, the simulation results matched the current–voltage measurements data well, which verifies the validity of the damage mechanism of proton irradiation.
机译：研究了InP / InGaAs异质结构中质子辐照的损伤机理。通过对非辐照和3 MeV的深层瞬态光谱（DLTS），电容-电压（C–V）测量和SRIM（物质中离子的终止和范围，蒙特卡洛代码）仿真，对深层陷阱进行了详细研究。质子辐照的样品的通量为5×10 12 p / cm 2 。与未辐照样品相比，通过DLTS在辐照后样品中测量到EC-0.37 eV处的新电子陷阱，并且该电子陷阱更靠近禁带的中心。阱中的陷阱浓度，界面陷阱电荷密度和电子俘获截面为4×10 15 cm -3 ，1.8×10 12 cm −2 和9.61×10 −15 cm 2 。用作重组中心的深能级陷阱在较低的正向偏压下产生了较大的重组电流，并使InP / InGaAs异质结构的正向电流增加，用于后辐照样品。将深能级陷阱参数添加到技术计算机辅助设计（TCAD）仿真工具中后，仿真结果与电流-电压测量数据完全吻合，从而验证了质子辐照损伤机理的有效性。

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