Localized Heating in Mo'I'ei-Based Resistive Memory Devices

机译：基于Mo'I'ei的电阻存储设备中的局部加热

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Layered materials like transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN) have been recently demonstrated as the switching layers in resistive random access memory (RRAM) devices [1]–[3], but their switching mechanisms are not yet well understood. In this work, we show resistive memory switching in MoTe2 devices and investigate the thermal origins of their switching behavior using scanning thermal microscopy (SThM). We observe localized heating due to the formation of a conductive plug, which is correlated with electro-thermal simulations, providing the first thermal insights into the operation of such RRAM devices.

机译：层状材料，如过渡金属二硫化碳（TMDs）和六方氮化硼（h-BN），最近已被证明是电阻随机存取存储器（RRAM）设备中的开关层[1] – [3]，但它们的开关机制尚未出现非常明白。在这项工作中，我们展示了MoTe2器件中的电阻式存储器开关，并使用扫描热显微镜（SThM）研究了其开关行为的热起源。由于导电插头的形成，我们观察到局部加热，这与电热模拟相关，从而为此类RRAM器件的运行提供了初步的热学见解。

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来源
《2018 76th Device Research Conference》|2018年|1-2|共2页
会议地点 Santa Barbara(US)
作者
Isha M. Datye; Miguel Muñoz Rojo; Eilam Yalon; Michal J. Mleczko; Eric Pop;
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作者单位

Electrical Engineering, Stanford University, Stanford, CA, 94305, USA;

Electrical Engineering, Stanford University, Stanford, CA, 94305, USA;

Electrical Engineering, Stanford University, Stanford, CA, 94305, USA;

Electrical Engineering, Stanford University, Stanford, CA, 94305, USA;

Electrical Engineering, Stanford University, Stanford, CA, 94305, USA;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Plugs; Gold; Heating systems; Switches; Electrodes; Aluminum oxide; Voltage measurement;

机译：插头;金;加热系统;开关;电极;氧化铝;电压测量;;

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专利

1. Localized Heating and Switching in MoTe2-Based Resistive Memory Devices [J] . Nature reviews Cancer . 2020,第2期

机译：基于Mote2的电阻存储器件中的本地化加热和切换
2. Localized Heating and Switching in MoTe2-Based Resistive Memory Devices [J] . Datye Isha M., Rojo Miguel Munoz, Yalon Eilam, Nano letters . 2020,第2期

机译：基于Mote2的电阻存储器件中的本地化加热和切换
3. High-speed and localized resistive switching characteristics of double-layer SrZrO_3 memory devices [J] . Lin M.-H., Wu M.-C., Huang C.-Y., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2010,第29期

机译：双层SrZrO_3存储设备的高速和局部电阻切换特性
4. Localized Heating in Mo'I'ei-Based Resistive Memory Devices [C] . Isha M. Datye, Miguel Mu?oz Rojo, Eilam Yalon, Device Research Conference . 2018

机译：基于Mo'I'ei的电阻存储器件的本地化加热
5. Organometal Halide Perovskite Based Resistive Memory Devices: Device Engineering and Material Characterization [D] . Wu, Xiaojing. 2017

机译：有机卤化物钙钛矿基电阻存储器装置：器件工程和材料表征
6. Remote control of resistive switching in TiO2 based resistive random access memory device [O] . Dwipak Prasad Sahu, S. Narayana Jammalamadaka -1

机译：基于TiO2的电阻式随机存取存储设备中的电阻切换的远程控制
7. Perovskite Memory Devices: High‐Performance Solution‐Processed Organo‐Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross‐Bar Array Structure (Adv. Mater. 21/2019) [O] . Keehoon Kang, Heebeom Ahn, Younggul Song, 2019

机译：Perovskite内存设备：高性能解决方案处理有机金属卤化物跨杆阵列结构中的UniPolar电阻存储器件（ADV。Mater。21/2019）

Localized Heating in Mo'I'ei-Based Resistive Memory Devices

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