The Study of Harmonic-Mode Operation of Transfer Electron Devices on Based Graded-Gap Semiconductors

机译：基于梯度间隙半导体的转移电子器件的谐波模式研究

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Mathematical model and simulation results of devices with intervalley electron transfer effect based on graded-gap semiconductors are presented in this article. Drift of space-charge waves and the occurrence of self-oscillations in such devices are analyzed. Moreover, this paper aims to show that the use of graded-gap semiconductors makes it possible to obtain the generation in the sub-terahertz range.

机译：本文介绍了基于梯度间隙半导体的具有间隔电子转移效应的器件的数学模型和仿真结果。分析了这种装置中的空间电荷波的漂移和自激振荡的发生。此外，本文旨在表明，使用梯度隙半导体可以获取亚太赫兹范围内的能量。

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来源
《2018 IEEE 17th International Conference on Mathematical Methods in Electromagnetic Theory》|2018年|168-172|共5页
会议地点 Kiev(UA)
作者
Ihor Storozhenko; Maryna Kaydash; Oleksandr Yaroshenko;
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作者单位

National University of Pharmacy, Dept. of Physics, Kharkiv, Ukraine;

National University of Pharmacy, Dept. of Physics, Kharkiv, Ukraine;

V. Karazin National University of Kharkiv, Dept. of BME and CIT, Kharkiv, Ukraine;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Schottky diodes; Charge carrier processes; Oscillators; Mathematical model; Cathodes; Scattering;

机译：肖特基二极管;电荷载流子过程;振荡器;数学模型;阴极;散射;;

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The Study of Harmonic-Mode Operation of Transfer Electron Devices on Based Graded-Gap Semiconductors

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