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首页> 外文会议>2018 Progress in Applied Electrical Engineering >Design of a High-Frequency Improved Current-Fed Quasi Z-Source Inverter based on SiC devices
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Design of a High-Frequency Improved Current-Fed Quasi Z-Source Inverter based on SiC devices

机译：基于SiC器件的高频改进型电流馈准Z源逆变器设计

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This paper presents design process of the 6 kVA improved Current-Fed quasi Z-Source Inverter (iCFqZSI) built with Silicon Carbide (SiC) power semiconductor devices. Impedance network is modified in order to reduce voltage stress of the diodes, furthermore, a fourth MOSFET leg is also added to perform shoot-through states with low on-state losses. The inverter is expected to operate as an interface between three-phase grid and battery energy storage. Design is based on a simulation study performed in Saber, which shows detailed operating conditions of the improved impedance network for the switching frequency range between 50 and 300 kHz. Paper deals also with selection of SiC devices - transistors and diodes (including power losses estimation) and their gate drive circuits. Problems related to passive components (inductors and capacitors) of the impedance circuit and the LC-filter are also discussed. Special attention has been paid to a power board and a busbar in order to minimize circuit parasitic components during 3D CAD design procedure.
机译：本文介绍了采用碳化硅（SiC）功率半导体器件构建的6 kVA改进型电流馈电准Z源逆变器（iCFqZSI）的设计过程。修改了阻抗网络以降低二极管的电压应力，此外，还增加了第四个MOSFET支路，以实现具有低导通损耗的直通状态。逆变器有望作为三相电网和电池储能之间的接口。该设计基于在Sabre中进行的仿真研究，该仿真研究显示了针对50至300 kHz开关频率范围的改进阻抗网络的详细工作条件。论文还涉及SiC器件的选择-晶体管和二极管（包括功率损耗估算）及其栅极驱动电路。还讨论了与阻抗电路和LC滤波器的无源组件（电感器和电容器）有关的问题。为了在3D CAD设计过程中最大程度地减少电路寄生元件，已经特别注意了电源板和母线。

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