Programmable Broad-Band Power Electronics Current Source with GaN Transistors in Power Stage

机译：功率级中带有GaN晶体管的可编程宽带电力电子电流源

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In this work the power electronics programmable current source (PCS) is presented. The fundamental part of PCS is broad-band power electronics controlled current source (VCCS) with sigma-delta modulator (SDM) based on a comparator with a dynamic hysteresis loop. The basic premise of the proposed VCCS conception is obtainment of precise mapping of the output current in the reference signal. Besides, the structure of the converter control system is simple - no “purely” digital components are used in the SDM nor in the converter's output current regulator. Due to very high frequency of the SDM output bit stream (about 1 MHz) in the output stage of the converter the GaN EHEMTs are used. The work presents the PCS's basics of operation as well as results of the PCS simulation studies and is devoted to the first stage of design of the converter.

机译：在这项工作中，介绍了功率电子可编程电流源（PCS）。 PCS的基本部分是基于具有动态滞环的比较器的带sigma-delta调制器（SDM）的宽带功率电子控制电流源（VCCS）。提出的VCCS概念的基本前提是获得参考信号中输出电流的精确映射。此外，转换器控制系统的结构很简单-SDM或转换器的输出电流调节器均未使用“纯”数字组件。由于转换器输出级中SDM输出位流的频率非常高（大约1 MHz），因此使用GaN EHEMT。该工作介绍了PCS的操作基础以及PCS仿真研究的结果，并致力于转换器设计的第一阶段。

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来源
《2018 Progress in Applied Electrical Engineering》|2018年|1-5|共5页
会议地点 Koscielisko(PL)
作者
Dominik Matecki; Michal Gwóźdź;
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作者单位

Institute of Electrical Engineering and Electronics, Poznan University of Technology, Poznan, Poland;

Institute of Electrical Engineering and Electronics, Poznan University of Technology, Poznan, Poland;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Regulators; Power electronics; Gallium nitride; Mathematical model; Frequency modulation; Pulse modulation;

机译：稳压器;电力电子设备;氮化镓;数学模型;频率调制;脉冲调制;;

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1. Broadband power electronics controlled voltage source with output stage based on GaN transistors [J] . Michal GWOZDZ Przeglad Elektrotechniczny . 2018,第5期

机译：具有基于GaN晶体管的输出级的宽带电力电子控制电压源
2. Study of high breakdown voltage GaN-based current-aperture vertical electron transistor with source-connected field-plates for power applications [J] . Wang Haiyong, Mao Wei, Cong Guanyu, Semiconductor science and technology . 2018,第7期

机译：具有源极连接场板的高击穿电压GaN基电流孔径垂直电子晶体管的研究
3. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics [J] . Hodges C., Anaya Calvo J., Stoffels S., Applied Physics Letters . 2013,第20期

机译：电力电子设备用AlGaN / GaN场效应晶体管—有限的GaN层厚度对热特性的影响
4. Programmable Broad-Band Power Electronics Current Source with GaN Transistors in Power Stage [C] . Dominik Matecki, Michal Gwó?d? Conference on Progress in Applied Electrical Engineering . 2018

机译：可编程宽带电源电子电流电流源，带GaN晶体管电源级
5. Design and Development of GaN-Based Vertical Transistors for Increased Power Density in Power Electronics Applications [D] . Ji, Dong. 2017

机译：电力电子应用增加功率密度的GaN基垂直晶体管的设计与开发
6. Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells [O] . Seil Kim, Min-Pyo Lee, Sung-June Hong, 2018

机译：利用晶体管单元非对称功率组合的Ku波段50 W GaN HEMT功率放大器
7. GaN-Based Power Transistors for Future Power Electronic Converters [O] . Everts Jordi, Das Jo, Van dan Keybus Jeroen, 2010

机译：基于GaN的功率晶体管，用于未来的功率电子转换器
8. GaN Power Electronics: From GaN-on-Si Lateral Transistor to GaN-on-GaN Vertical Transistor and GaN CMOS IC. [R] . Chu, R., Cao, Y., Li, R., 2017

机译：GaN功率电子器件：从GaN-on-si横向晶体管到GaN-on-GaN垂直晶体管和GaN CmOs IC。

Programmable Broad-Band Power Electronics Current Source with GaN Transistors in Power Stage

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