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首页> 外文会议>21st International Symposium on Space Terahertz Technology 2010 >Development of Microwave and Terahertz Detectors Utilizing AIN/GaN High Electron Mobility Transistors
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Development of Microwave and Terahertz Detectors Utilizing AIN/GaN High Electron Mobility Transistors

机译：利用AIN / GaN高电子迁移率晶体管开发微波和太赫兹探测器

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摘要

We report our work on development of microwave and terahertz detectors using AIN/GaN high electron mobility transistors. Microwave measurements (f= 10-40 GHz) using AIN/GaN HEMTs as detectors have been performed and the results have shown that the device work in non-resonant mode at room temperature with a responsivity roughly proportional to f~ 2 at low frequencies. Measured responsivity as a function of gate bias also shows reasonable agreement with theory and published results. Initial calculation results show that an AIN/GaN HEMT with 0.15 um gate length works in the resonant mode when it is cooled down to 77K. The fundamental resonant frequency increases from 200 GHz to 3.2 THz with gate-to-source voltage swing of 0.01 V to 2.0 V. The drain-to-source voltage response also increases with increasing of the gate-to-source voltage swing. We plan to integrate the AIN/GaN HEMT devices broadband lens-coupled antennas and low-pass filters for tunable plasma wave THz detectors.
机译：我们报告了我们使用AIN / GaN高电子迁移率晶体管开发微波和太赫兹探测器的工作。已经进行了使用AIN / GaN HEMT作为探测器的微波测量（f = 10-40 GHz），结果表明该器件在室温下以非谐振模式工作，在低频下的响应度大致与f〜2成正比。测得的响应度与栅极偏置的关系也表明与理论和已发表的结果有合理的一致性。初步计算结果表明，栅极长度为0.15 um的AIN / GaN HEMT冷却至77K时，将以谐振模式工作。基本谐振频率从200 GHz增加到3.2 THz，栅极至源极之间的电压摆幅为0.01 V至2.0V。漏极至源极之间的电压响应也随栅极至源极电压摆幅的增加而增加。我们计划将AIN / GaN HEMT设备的宽带透镜耦合天线和低通滤波器集成到可调谐等离子波THz检测器中。

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  • 来源
  • 会议地点 Oxford and Didcot(GB);Oxford and Didcot(GB)
  • 作者

    L. Liu; B. Sensale-Rodriguez; Z. Zhang; T. Zimmermann; Y. Cao; D. Jena; P. Fay; H. Xing;

  • 作者单位

    Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA,Advanced Diagnostics and Therapeutics Initiative, University of Notre Dame, Notre Dame, IN 46556, USA;

    Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA;

    Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA;

    Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA;

    Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA;

    Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA;

    Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA;

    Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 微波与超高频技术;
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