The fabrication of submicrometer structures in Si and porous-Si by focused ion beam

机译：聚焦离子束在硅和多孔硅中制备亚微米结构

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Focused ion beam (FIB) technology has emerged as a powerful tool for maskless patterning of submicrometer scale structures. Best ion columns can provide 5 nm ion beam spot size and the utilisation of reactive gas chemistries provide high aspect ratios suitable for microengineering. In this work, submicrometer scale structures were fabricated by FIB milling. Also, a thermal bimorph actuator was fabricated by FIB gas assisted etching (XeF_2). FIB milling was utilised in the patterning of Si and porous Si which is a promising new material for optoelectronics and micromechanics. The morphology of the fabricated structures was investigated by FIB, AFM and TEM. This work was supported by the Finnish Academy, project 47793.

机译：聚焦离子束（FIB）技术已成为一种强大的工具，可用于亚微米级结构的无掩模图案化。最佳的离子柱可提供5 nm的离子束斑点大小，而反应性气体化学物质的利用可提供适用于微工程的高纵横比。在这项工作中，通过FIB铣削制造了亚微米级的结构。此外，通过FIB气体辅助蚀刻（XeF_2）制作了热双压电晶片执行器。 FIB铣削被用于Si和多孔Si的图案化，这是光电子和微机械的有希望的新材料。通过FIB，AFM和TEM研究了所制造结构的形态。这项工作得到了芬兰科学院项目47793的支持。

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来源
《2nd International EUSPEN Conference on Precision Engineering Nanotechnology Vol.1, May 27th-31st, 2001, Turin, Italy》|2001年|p.74-77|共4页
会议地点 Turin(IT)
作者
J. Remes; H. Moilanen; S. Leppaevuori;
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作者单位

University of Oulu, Microelectronics laboratory, EMPART Research Group of Infotech, Finland;

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原文格式 PDF
正文语种 eng
中图分类机械、仪表工业;
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机译：通过聚焦离子束掺杂的AlxGa1-xAs的过度生长制备亚微米图案化的二维电子气
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机译：聚焦离子束注入和湿法刻蚀制备可见光致发光si微结构

The fabrication of submicrometer structures in Si and porous-Si by focused ion beam

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