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首页> 外文会议>2nd International Symposium on Physics and Technology of Sensors >Effect of post deposition annealing temperature of e-beam evaporated Ta2O5 films on sensitivities of electrolyte-insulator-semiconductor devices
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Effect of post deposition annealing temperature of e-beam evaporated Ta2O5 films on sensitivities of electrolyte-insulator-semiconductor devices

机译：电子束蒸发Ta 2 O 5 薄膜的沉积后退火温度对电解质-绝缘体-半导体器件灵敏度的影响

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In this work, the annealing effects of e-beam deposited TaO films on the pH sensitivities of EIS based sensors are presented. XPS studies confirmed that the films annealed above 700 °C showed the best stoichiometry (TaO) compared to the as deposited film and the films annealed till 600 °C. XRD spectra confirmed the amorphous nature of the as deposited film, which remained amorphous till 600 °C and became polycrystalline above 700 °C. The EIS device showed the maximum sensitivity of 51.4mV/pH for the film annealed at 700 °C, while the device with the as deposited film had a sensitivity of 44.3mV/pH. Further increase in annealing temperature above 700 °C resulted in reduced sensitivity (31.0mV/pH) because of increased interface states (indicated by C-V hysteresis in a MOS device) and enhanced cracks formation in the films (indicated by FESEM). Therefore, the annealing temperature of 700 °C was found to be the optimum annealing temperature for the e-beam deposited TaO films.
机译：在这项工作中，提出了电子束沉积的TaO薄膜对基于EIS的传感器的pH敏感性的退火作用。 XPS研究证实，与沉积时的膜相比，在700°C以上退火的膜表现出最佳的化学计量比（TaO），并且退火至600°C的膜。 XRD光谱证实了所沉积膜的非晶性质，其在600℃之前保持非晶状态，而在700℃以上变为多晶。对于在700°C退火的薄膜，EIS器件显示的最大灵敏度为51.4mV / pH，而带有沉积薄膜的器件的灵敏度为44.3mV / pH。退火温度进一步提高到700°C以上会导致灵敏度降低（31.0mV / pH），这是因为界面状态的增加（由MOS器件的C-V磁滞表示）和膜中裂纹的形成增强（由FESEM表示）。因此，发现700℃的退火温度是电子束沉积的TaO膜的最佳退火温度。

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