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High-NA EUV projection lens with central obscuration

机译:高NA EUV投影镜头,带中央遮蔽

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摘要

EUV projection lens consisting of four coaxial mirrors with a Numerical Aperture of 0.485 and a twelve-fold demagnification has been developed. According to the computation the circuit features at 10 nm in center and 20 nm on the edge of 12.4 mm field of view can be imaged. The scheme of the projection lens with such demagnification promotes the production of the defect-less masks and reduction of their cost.
机译:已开发出由四个同轴镜构成的EUV投影透镜,其数值孔径为0.485,放大倍数为12倍。根据计算,可以对中心10 nm处和12.4 mm视场边缘处20 nm处的电路特征进行成像。具有这种缩小倍率的投影透镜的方案促进了无缺陷掩模的生产并降低了其成本。

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