• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>The 3rd International Symposium on Material Chemistry in Nuclear Environment (Material Chemistry '02 MC'02) Mar 13-15, 2002 Tsukuba >STUDY OF RADIATION DEFECTS IN SEMICONDUCTORS BY MEANS OF POSITRON ANNIHILATION
【24h】

STUDY OF RADIATION DEFECTS IN SEMICONDUCTORS BY MEANS OF POSITRON ANNIHILATION

机译：用正电子AN没法研究半导体中的辐射缺陷

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In a nuclear environment, a strong degradation of important properties is observed for many materials which are otherwise very reliable. This is especially valid for silicon, the most important semiconductor. In the presented paper, two examples for the study of lattice defects in silicon by means of positron annihilation will be given. Firstly, the degradation of silicon detectors used for the particle detection in high-luminosity collider experiments starts to limit the lifetime of the whole experiment. An annealing experiment on n-irradiated Si will be presented. Beside the destructive effect of high-radiation conditions, such radiation-induced defects can have a beneficial result. This will be demonstrated for the creation of new gettering zones by high-energy self-implantation of silicon.
机译：在核环境中，对于许多本来就很可靠的材料，观察到重要性能的强烈下降。这对于最重要的半导体硅尤其有效。在本文中，将给出两个通过正电子an灭研究硅中晶格缺陷的例子。首先，在高发光对撞机实验中用于粒子检测的硅检测器的退化开始限制整个实验的寿命。将进行n辐照的Si退火实验。除了高辐射条件的破坏性影响外，此类辐射引起的缺陷还可以产生有益的结果。这将通过硅的高能自注入产生新的吸杂区而得到证明。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号