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首页> 外文会议>The 3rd International Symposium on Material Chemistry in Nuclear Environment (Material Chemistry '02 MC'02) Mar 13-15, 2002 Tsukuba >FORMATION MECHANISM OF SIC IN C-SI SYSTEM BY ION IRRADIATION
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FORMATION MECHANISM OF SIC IN C-SI SYSTEM BY ION IRRADIATION

机译：离子辐照在C-SI体系中SIC的形成机理

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摘要

The irradiation effects of 2 MeV He~+, Ne~+, and Ar~+ ions on the film structure of the C-Si system were investigated with RHEED and XPS. The ion dose dependence of the SiC formation was kinetically analyzed. The SiC formation at moderate temperature was achieved by 2 MeV ion irradiation when the thickness of the initial carbon films was appropriate. The evolution process of the SiC film thickness consisted of the 3 stages. The first stage was the steep increase of the SiC, and was governed by the inelastic collision. The second was the gentle increase of the SiC, and was governed by the diffusion. The last was the decrease of the SiC, and was caused by the sputtering. The formation mechanism of the SiC was discussed.
机译：用RHEED和XPS研究了2 MeV He〜+，Ne〜+和Ar〜+离子对C-Si体系膜结构的辐照效果。动力学分析了SiC形成的离子剂量依赖性。当初始碳膜的厚度合适时，通过2 MeV离子辐照可在中等温度下形成SiC。 SiC膜厚度的演变过程包括三个阶段。第一阶段是SiC的急剧增加，并受非弹性碰撞的支配。第二个是SiC的缓慢增加，并受扩散控制。最后是SiC的减少，这是由溅射引起的。讨论了SiC的形成机理。

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