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首页> 外文期刊>Journal of Nuclear Materials: Materials Aspects of Fission and Fusion >Analysis of possible deformation mechanisms in helium-ion irradiated SiC
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Analysis of possible deformation mechanisms in helium-ion irradiated SiC

机译：氦离子辐照SiC可能的变形机理分析

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Possible modes of accommodating deformation during physically constrained swelling of SiC during He-ion irradiation (similar to2 x 10(22) He/m(2) below 200 degreesC) were studied using finite, element modeling. When, accommodating deformation occurs only by elastic deformation, calculated internal stresses are much higher than the fracture stress for SiC. On the other hand, stresses below the fracture stress result when allowing irradiation-enhanced creep (IEC) to act as an additional accommodation mechanism. For a steady-state IEC. compliance coefficient for SiC equal to 6 x 10(-5) MPa-1 dpa(-1), the maximum observed von Mises stress was less than the fracture stress of the material. This, value for the creep compliance appears to be significantly larger than the few experimentally available measured values for crystalline SiC in the open literature. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 16]
机译：使用有限元模型研究了He离子辐照期间SiC的物理约束膨胀过程中适应变形的可能模式（类似于200℃以下的2 x 10（22）He / m（2））。当仅通过弹性变形发生适应变形时，计算出的内应力远高于SiC的断裂应力。另一方面，当允许辐射增强的蠕变（IEC）充当额外的调节机制时，会产生低于断裂应力的应力。用于稳态IEC。 SiC的柔顺系数等于6 x 10（-5）MPa-1 dpa（-1），观察到的最大von Mises应力小于材料的断裂应力。该蠕变顺应性的值似乎比公开文献中的晶体SiC的少数实验可得的测量值大得多。 （C）2002 Elsevier Science B.V.保留所有权利。 [参考：16]

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