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首页> 外文会议>The 3rd International Symposium on Material Chemistry in Nuclear Environment (Material Chemistry '02 MC'02) Mar 13-15, 2002 Tsukuba >TWO-DIMENSIONAL GRAPHITE-LIKE Si_xC OBSERVED BY POLARIZATION DEPENDENCE IN THE NEAR-EDGE X-RAY ABSORPTION FINE STRUCTURE
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TWO-DIMENSIONAL GRAPHITE-LIKE Si_xC OBSERVED BY POLARIZATION DEPENDENCE IN THE NEAR-EDGE X-RAY ABSORPTION FINE STRUCTURE

机译：近边X射线吸收精细结构中极化相关性观察到的二维石墨状Si_xC

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摘要

Solid carbon forms mainly two kinds of local structures, i.e., three-dimensionally spread diamond-like structure and two-dimensional graphite structure. In contrast, solid silicon and silicon carbide tend to prefer only diamond structure composed of sp3 bonds resulting in the formation of a three-dimensionally spread lattice. Recently, the theoretical calculation using an ab initio tight-binding-like method has revealed that two-dimensional graphite-like SiC layer possibly exists (M. Fuentes-Cabrera et al., Model. Simul. Mater. Sci. Eng. 7, 929 (1999)). In order to clarify whether or not such two-dimensional graphitic Si_xC layer exists, we implanted Si~+ ions in highly oriented pyrolitic graphite (HOPG), and the electronic structures localized at the silicon atoms were investigated in-situ by means of X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) using linearly polarized synchrotron radiation. The resonance peak appeared at 1839 eV in the Si K-edge NEXAFS spectra for Si~+-implanted HOPG, and its energy is lower than the resonance peaks in any other Si-containing materials. The intensity of the resonance peak showed strong polarization dependence, which suggests that the final state orbitals around the Si atoms have π~*-like character. It is elucidated that the Si-C bonds produced by the Si~+-ion implantation are nearly parallel to the graphite plane, and Si_xC phase forms two-dimensionally spread graphite-like layer with sp bonds.
机译：固态碳主要形成两种局部结构，即三维分布的类金刚石结构和二维石墨结构。相反，固体硅和碳化硅倾向于仅偏爱由sp3键组成的金刚石结构，从而形成三维分布的晶格。最近，使用从头开始紧密结合的方法进行的理论计算表明，可能存在二维石墨状的SiC层（M. Fuentes-Cabrera等人，Model。Simul。Mater。Sci。Eng。7， 929（1999））。为了弄清楚是否存在这种二维石墨Si_xC层，我们将Si〜+离子注入到高度取向的热解石墨（HOPG）中，并通过X-原位研究了位于硅原子上的电子结构。射线光电子能谱（XPS）和近边缘X射线吸收精细结构（NEXAFS）使用线性偏振同步加速器辐射。注入Si〜+的HOPG的Si K边缘NEXAFS光谱中的共振峰出现在1839 eV，其能量低于任何其他含Si材料的共振峰。共振峰的强度表现出强烈的极化依赖性，这表明Si原子周围的最终状态轨道具有π〜*样特征。阐明了通过Si〜+离子注入产生的Si-C键几乎平行于石墨平面，并且Si_xC相形成具有sp键的二维铺展的石墨状层。

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