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首页> 外文会议>The 3rd International Symposium on Material Chemistry in Nuclear Environment (Material Chemistry '02 MC'02) Mar 13-15, 2002 Tsukuba >CHARACTERIZATION OF NANOPARTICLE AND POROUS ULTRA LOW-K USING POSITRON BEAM
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CHARACTERIZATION OF NANOPARTICLE AND POROUS ULTRA LOW-K USING POSITRON BEAM

机译：正电子束表征纳米粒子和多孔超低k

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摘要

Nanoparticle materials are important because they exhibit unique properties due to size effects, quantum tunneling, and quantum confinement. As particle sizes are reduced to the nanometer scale, presence of vacancy clusters is expected to affect properties of nanomaterials. A combination of positron lifetime spectroscopy, which tells size of vacancy clusters, and coincidence Doppler broadening of annihilation radiation, which tell where vacancy clusters are located was used to study defect structures on nanomaterials of Au nanoparticles embedded in MgO. Vacancy clusters were found on the surfaces of Au nanoparticles. When the packing density between multilevel interconnects in microelectronic devices increases, a low dielectric constant material is needed to minimize RC delay. Porous oxide films are some of these new low-k materials that have been actively studied by the microelectronics industry. An ideal porous material would consist of a network of closed, small pores with narrow size distribution. However, large and interconnected pores, so called "killer pores", result in high current leakage and poor mechanical strength. Clearly, characterization and understanding of pore size and interconnectivity are important to optimize the design of porous materials. Using positron beam, we have found that pore percolation in porous methyl-silsesquioxane (MSQ) films strongly depends on the molecular mass of pore generators.
机译：纳米粒子材料之所以重要，是因为它们由于尺寸效应，量子隧穿和量子约束而表现出独特的性能。随着粒径减小到纳米级，空位簇的存在预计会影响纳米材料的性能。通过使用正电子寿命光谱技术（可指示空位簇的大小）和同时发生多普勒展宽的an灭辐射（可指示空位簇的位置）来研究嵌入MgO中的金纳米颗粒的缺陷结构。在金纳米颗粒的表面上发现了空位簇。当微电子器件中多层互连之间的填充密度增加时，就需要一种低介电常数的材料来最小化RC延迟。多孔氧化物膜是微电子工业已积极研究的这些新型低k材料。理想的多孔材料应由具有狭窄尺寸分布的封闭小孔网络组成。然而，大且相互连接的孔，即所谓的“杀手孔”，导致高电流泄漏和较差的机械强度。显然，表征和理解孔径和互连性对于优化多孔材料的设计很重要。使用正电子束，我们发现在多孔甲基硅倍半氧烷（MSQ）膜中的孔渗滤强烈取决于孔生成器的分子量。

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