PHOTOACOUSTIC AND X-RAY STUDIES ON H~+ ION IMPLANTED n-GaAs

机译：H〜+离子注入n-GaAs的光声和X射线研究

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Qualitative and quantitative analysis on the defects in H~+ ion implanted n-GaAs are carried out here by Atomic Force Microscopy (AFM), XRD and Photoacoustic measurements for various doses. The close agreement between these measurements reveal that even the microscopic strain parameter ∈_1 can be viewed in photoacoustics. Various thermal parameters are computed for the 30 keV H~+ ion implanted n-GaAs and reported for the first time.

机译：本文通过原子力显微镜（AFM），XRD和光声测量对各种剂量的H〜+离子注入的n-GaAs中的缺陷进行了定性和定量分析。这些测量之间的密切一致性表明，即使在光声中也可以看到微观应变参数∈_1。计算了30 keV H〜+离子注入的n-GaAs的各种热参数，并首次进行了报道。

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来源
《8th Asian Conference on Solid State Ionics: Trends in the New Millennium; Dec 15-19, 2002; Langkawi, Malaysia》|2002年|p.849-856|共8页
会议地点 Langkaw(MY)
作者
S.D.D.ROY; K.S.CHANDRASEKARAN; K.RAMACHANDRAN;
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作者单位

School of Physics, Madurai Kamaraj University, Madurai - 625 021, India;

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原文格式 PDF
正文语种 eng
中图分类物理学;
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1. Photoacoustic and x-ray studies on H+ ion implanted n-GaAs [J] . Roy SDD., Sankar N., Ramachandran K., Crystal Research and Technology: Journal of Experimental and Industrial Crystallography . 2002,第11期

机译：H +离子注入n-GaAs的光声和X射线研究
2. EPR and photoacoustic studies on 30 kev H~+ ion-implanted n-GaAs [J] . R. Srinivasan, K. Ramachandran Journal of Luminescence . 2007,第1期

机译：30 kev H〜+离子注入n-GaAs的EPR和光声研究
3. EPR and photoacoustic studies on 30 kev H+ ion-implanted n-GaAs [J] . Srinivasan R, Ramachandran K Journal of Luminescence . 2007,第1期

机译：30 kev H +离子注入n-GaAs的EPR和光声研究
4. PHOTOACOUSTIC AND X-RAY STUDIES ON H~+ ION IMPLANTED n-GaAs [C] . S.D.D.ROY, K.S.CHANDRASEKARAN, K.RAMACHANDRAN Asian conference on solid state ionics . 2003

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5. High resolution triple axis x-ray diffraction studies of damage caused by co-implantation of gallium/carbon and indium/carbon in gallium arsenide [D] . Horng, Shyan-Tzong 1994

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PHOTOACOUSTIC AND X-RAY STUDIES ON H~+ ION IMPLANTED n-GaAs

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