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首页> 外文会议>8th International conference on commercialization of micro and nano systems (COMS 2003) >PIRL? III, VERSATILE POLYIMIDE MATERIAL SUITABLE FOR MANY MEMS APPLICATIONS, IMPROVES COMMERCIALIZATION OF MEMS DEVICESUSING I-LINE TECHNOLOGIES
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PIRL? III, VERSATILE POLYIMIDE MATERIAL SUITABLE FOR MANY MEMS APPLICATIONS, IMPROVES COMMERCIALIZATION OF MEMS DEVICESUSING I-LINE TECHNOLOGIES

机译：PIRL？ III，适用于许多MEMS应用的多功能聚酰亚胺材料，通过I线技术提高了MEMS设备的商业化程度

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摘要

PiRL? III is a spin on polyamic acid that converts to a polyimide form when heated. Like most other polyimides, PiRL? III has excellent high temperature stability, good resistance to acids and solvents, and good adhesion to semiconductor substrates. What makes PiRL? III unique is its ability to remain soluble in mild, alkaline media even after very high temperature processing (>350℃). This allows it to be removed easily with positive photoresist developers. The rate at which PiRL? III dissolves in the photoresist developer is controlled by the post-applied bake conditions. The combination of these properties allows PiRL? III to be used in such applications as metal lift-off, Nano SU-8? lift-off, creation of cantilevers and free standing structures, LIGA like molds, temporary wafer to wafer bonding, and as a protective coating during wafer sawing/dicing.rnPiRL? III improves the commercialization of MEMS devices using these applications. This is accomplished by allowing these applications to be performed using the standard I-line technologies available to today's semiconductor fabrication facilities. For instance, PiRL? III is compatible with most 1-Line resists, both positive and negative acting, and is applied and removed using the same standard processes and equipment. It can be Wet developed with the photoresist, oxygen etched, or deep reactive ion etched (DRIE). PiRL? III uses standard solvents and introduces no new chemicals or safety concerns into these facilities.
机译：PiRL？ III是旋转的聚酰胺酸，加热时会转变为聚酰亚胺形式。像大多数其他聚酰亚胺一样，PiRL？ III具有出色的高温稳定性，良好的耐酸和耐溶剂性以及对半导体基材的良好粘合性。是什么让PiRL？ III的独特之处在于即使在非常高的温度（> 350℃）下仍可溶于温和的碱性介质。这使得它可以用正性光刻胶显影剂轻松去除。 PiRL的速率？ III溶解在光刻胶显影剂中是由后施加的烘烤条件控制的。这些特性的组合允许使用PiRL？ III可用于金属剥离，Nano SU-8？剥离，建立悬臂和自由站立的结构，像LIGA一样的模具，临时的晶片与晶片结合以及在晶片锯切/切割过程中用作保护涂层。 III改善了使用这些应用的MEMS器件的商业化。这是通过允许使用当今的半导体制造设施可用的标准I-line技术执行这些应用来实现的。例如，PiRL？ III与大多数1-Line抗蚀剂兼容，包括正作用和负作用，并且使用相同的标准工艺和设备进行涂覆和去除。可以使用光刻胶，氧气蚀刻或深反应离子蚀刻（DRIE）湿显影。 PiRL？ III使用标准溶剂，并且不会在这些设施中引入任何新的化学品或安全问题。

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  • 会议地点 Amsterdam(NL);Amsterdam(NL)
  • 作者

    Madison M. Daily; Tony Flaim; William Dimenna; Jayson Cooper; Curtis Planje;

  • 作者单位

    Brewer Science, Inc., 2401 Brewer Drive, Rolla Missouri, USArnTel: 573 364-0300, Fax 573 458-4372, e-mail mdailv@brewerscience.com;

    rnBrewer Science, Inc., 2401 Brewer Drive, Rolla Missouri, USArn tflaim@brewerscience.com;

    Brewer Science, Inc., 2401 Brewer Drive, Rolla Missouri, USArn dimennaw@brewerscience.com;

    Brewer Science, Inc., 2401 Brewer Drive, Rolla Missouri, USArn jcooper@brewerscience.com;

    Brewer Science, Inc., 2401 Brewer Drive, Rolla Missouri, USArn cplanie@brewerscience.com;

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