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首页> 外文会议>9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy >The Laser-Stimulated Modification of the Surfaces of Polycrystalline CdTe Layers
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The Laser-Stimulated Modification of the Surfaces of Polycrystalline CdTe Layers

机译：多晶CdTe层表面的激光刺激改性

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摘要

Auger-spectra, electron microscope images, the distribution of chemical elements over CdTe polycrystalline layers irradiated with Q-switched laser pulses with a duration of 2*10~(-8) s, and an energy density below the material melting or damage threshold are considered. The laser irradiation of the polycrystalline layers is shown to result in the removal of the insulator phase from the surface and in the surface modification accompanied by a change in stoichiometry within the ～3-μm-thick surface layer. The removal of this layer improves the homogeneity of the polycrystalline surface. The depth of carbon penetration into the polycrystalline layer is estimated. The correlation between the photoelectric properties of CdTe polycrystalline layers and the laser-induced changes in the surface stehiometry is ascertained. The dependencies of photoconductivity on incident intensity for the coarse-grained films are similar to those for CdTe single crystals. The grain boundaries in fine-grained CdTe films play an important part in the generation and recombination of charge carriers.
机译：俄歇光谱，电子显微镜图像，以2 * 10〜（-8）s的Q开关激光脉冲辐照的CdTe多晶层上化学元素的分布以及低于材料熔化或破坏阈值的能量密度考虑过的。结果表明，多晶层的激光辐照导致绝缘体相从表面上去除，并导致表面改性，伴随着〜3μm厚表层内化学计量的变化。去除该层改善了多晶表面的均匀性。估计碳渗入多晶层的深度。可以确定CdTe多晶层的光电性能与激光诱导的表面等高线变化之间的相关性。粗糙颗粒薄膜的光电导对入射强度的依赖性与CdTe单晶相似。细粒CdTe薄膜中的晶界在电荷载流子的产生和复合中起着重要作用。

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