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9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy

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1.Room Temperature Point Defect Migration in Crystalline Si

机译：结晶硅中室温点缺陷的迁移
- 作者：Sebania Libertino;Salvatore Coffa
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- defects;
- diffusivity;
- migration;
- point defects;
- silicon;
2.Structural Investigations of Praseodymium Oxide Epitaxially Grown on Silicon

机译：硅外延生长的Pra氧化物的结构研究
- 作者：P. Zaumseil;E. Bugiel;J.P. Liu;H.J. Osten
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- heteroepitaxial growth;
- high-K gate material;
- TEM;
- XRD;
3.Suppression of Boron Transient Enhanced Diffusion by C Trapping

机译：通过碳陷阱抑制硼瞬态增强扩散
- 作者：S. Mirabella;A. Coati;S. Scalese;D. De Salvador;S. Pulvirenti;G. Bisognin;E. Napolitani;A. Terrasi;M. Berti;A. Carnera;A.V. Drigo;F. Priolo
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- C-trapping;
- shallow junctions;
- Si-interstitials;
- transient enhanced diffusion;
4.Structure and Stability of Thin Praseodymium Oxide Layers on Si(001)

机译：Si（001）上的Pra氧化物薄层的结构和稳定性
- 作者：H.-J. Muessig;J. Dabrowski;K. Ignatovich;J.P. Liu;V. Zavodinsky;H.J. Osten
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- Ab initio simulations;
- AES;
- heteroepitaxial growth;
- high-K gate material;
- initial stages;
- STM;
- XPS;
5.Study of Relaxed Si_(0.7)Ge_(0.3) Buffers, Grown on Patterned Silicon Substrates, by Raman Spectroscopy

机译：拉曼光谱研究在图案化硅衬底上生长的弛豫Si_（0.7）Ge_（0.3）缓冲液
- 作者：G. Woehl;E. Kasper;M. Klose;T. Hackbarth;H.-J. Herzog;H. Kibbel
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- differential molecular beam epitaxy;
- micro-raman spectroscopy;
- relaxed SiGe buffer layers;
6.The Structure and Photoluminescence of Erbium-Doped Nanocrystalline Silicon Thin Films Produced by Reactive Magnetron Sputtering

机译：反应磁控溅射制备掺Do纳米晶硅薄膜的结构和光致发光
- 作者：M.F. Cerqueira;M. Losurdo;M.V. Stepikhova;O. Conde;M.M. Giangregorio;Pedro Pinto;J.A. Ferreira
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- erbium;
- nanocrystalline silicon;
- photoluminescence;
- raman;
- spectroscopic ellipsometry (SE);
- X-ray;
7.The Laser-Stimulated Modification of the Surfaces of Polycrystalline CdTe Layers

机译：多晶CdTe层表面的激光刺激改性
- 作者：A. Baidullaeva;P.E. Mozol;A.I. Vlasenko
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- auger-spectra;
- bulk recombination;
- carbon distribution;
- grain boundary recombination;
- laser irradiation;
- photoconductivity;
- polycrystalline;
- surface;
8.The Effect of Intrinsic Point Defects upon Dislocation Motion in Silicon

机译：本征点缺陷对硅中位错运动的影响
- 作者：I.V. Peidous;K.V. Loiko;D. A. Simpson;W.R. Frensley;H.R. Huff
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- defects;
- dislocations;
- interaction;
- pinning;
- self-interstitials;
- silicon;
- stress;
9.Temporal Characteristics of the Optical Storage Effect in Si:Er

机译：Si：Er中光存储效应的时间特性
- 作者：M. Forcales;I.V. Bradley;J.-P.R. Wells;T. Gregorkiewicz
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- erbium;
- free-electron laser;
- photoluminescence;
- silicon;
10.Charge Relaxation at Oxygen-Enriched Silicon Grain Boundaries

机译：富氧硅晶界处的电荷弛豫
- 作者：A. Fedotov;A. Mazanik;A. Ulyashin
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- direct-bonded wafers;
- interface;
- oxygen;
- silicon;
11.Characterization of Interfacial States at Silicon Bicrystals

机译：硅双晶界面状态的表征
- 作者：G.N. Kamaev;S.V. Golod;E.M. Skok;A. Fedotov;A. Mazanik
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- defects;
- direct bonding;
- grain boundary;
- interface;
- microwave transient photoconductivity;
- polycrystal;
- silicon;
- silicon-on-insulator;
12.Crystalline Silicon for Solar Cells

机译：太阳能电池用结晶硅
- 作者：Martin Kittler;Wolfgang Koch
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- dislocations;
- EBIC;
- grain boundaries;
- hydrogen passivation;
- mc-Si;
- phosphorus gettering;
- photoluminescence;
- resistivity topography;
- scanning-DLTS;
- solar cells;
13.Defect Engineering and Prevention of Impurity Gettering at R_P/2 in Ion-Implanted Silicon

机译：离子注入硅中R_P / 2处的缺陷工程和杂质吸收的预防
- 作者：R. Koegler;A. Peeva;J. Kaschny;W. Skorupa;H. Hutter
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- Cu;
- defect engineering;
- ion implantation;
- R_P/2-Defects;
- Si;
14.Damage Evolution in Helium-Hydrogen Co-Implanted (100) Silicon

机译：氦-氢共注入（100）硅中的损伤演化
- 作者：R. Tonini;F. Corni;C. Nobili;G. Ottaviani;F. Cazzaniga;G. Queirolo
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- defects;
- ion implantation;
- Si:H;
- Si:He;
- boids;
15.Defect-Related Current Instabilities in InAs/GaAs and AIGaAs/GaAs Structures?

机译：InAs / GaAs和AIGaAs / GaAs结构中与缺陷相关的电流不稳定性？
- 作者：Zs.J. Horvath;S. Franchi;A. Bosacchi;P. Frigeri;E. Gombia;R. Mosca;Vo Van Tuyen
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- current instability;
- defects;
- GaAs/AlGaAs;
- GaAs/InAs;
- minority injection;
- quantum dots;
- recombination;
16.Application of Gate Oxide Integrity to the Evaluation of the Efficiency of Internal and External Gettering Sites in Si Wafers

机译：栅氧化完整性在硅晶片内部和外部吸气部位效率评估中的应用
- 作者：Sergei Koveshnikov;David Beauchaine;Zbigniew Radzimski;Li Ling;K.V. Ravi
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- gate oxide integrity;
- gettering;
- metallic impurity;
17.Vibrational Modes of Oxygen Dimers in Germanium

机译：锗中氧二聚体的振动模式
- 作者：V.V. Litvinov;L.I. Murin;J.L. Lindstroem;V.P. Markevich;A.A. Klechko
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- germanium;
- local vibrational modes;
- oxygen;
- oxygen dimer;
18.Platinum Silicide Precipitate Formation during Phosphorus Diffusion Gettering in Silicon

机译：硅中磷扩散吸收过程中硅化铂沉淀物的形成
- 作者：M. Seibt;A. Doeller;V. Kveder;A. Sattler;A. Zozime
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- gettering;
- metal impurities in silicon;
- phosphorus diffusion;
- platinum in silicon;
- silicide precipitates;
19.Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO_2 Films: Role of Vacancy-Like Defects

机译：正硅An灭研究硅中富氧和富硅SiO_2薄膜中的纳米析出物：空位样缺陷的作用
- 作者：R.S. Brusa;W. Deng;G.P. Karwasz;A. Zecca
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- oxygen precipitates;
- positrons;
- SiO_x precipitates;
- vacancies;
20.Segregation of Mg Implanted into InAs: Influence of the Internal Elastic Stresses

机译：注入InAs中的Mg偏析：内部弹性应力的影响
- 作者：O.I. Velichko;V.A. Dobrushkin;A.K. Fedotov;V.A. Tsurko
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- diffusion;
- elastic stress;
- indium arsenide;
- magnesium;
- segregation;
21.Silicon Wafer Requirements for ULSI Device Processing

机译：ULSI器件处理的硅晶圆要求
- 作者：Francesca Illuzzi
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- COPs;
- Cz growth;
- epitaxial wafers;
- silicon;
22.Impact of Hydrogen on Oxygen Precipitation and Gate Oxide Integrity after RTA Processing

机译：氢对RTA处理后氧析出和栅氧化完整性的影响
- 作者：T. Mueller;G. Obermeier;T. Bearda;A. Huber;R. Schmolke;W. von Ammon;W. Lerch
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- GOI-performance;
- hydrogen anneals;
- oxygen precipitation;
- rapid thermal annealing;
23.Incorporation, Diffusion and Agglomeration of Carbon in Silicon

机译：碳在硅中的结合，扩散和聚集
- 作者：P. Laveant;P. Werner;G. Gerth;U. Goesele
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- agglomeration;
- carbon;
- clusters;
- diffusion;
- MBE;
- molecular beam epitaxy;
- SiC;
24.Influence of Ge Content on Electrical Properties: Sheet Resistance and Hall Mobility in Ion Beam Synthesized Si_(1-x)Ge_x Alloy

机译：Ge含量对电性能的影响：离子束合成Si_（1-x）Ge_x合金的薄层电阻和霍尔迁移率
- 作者：C. Cerrina;A. Nejim;Y. Wang;P.L.F. Hemment
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- boron doping;
- carrier transport properties;
- ion beam synthesis;
- SiGe;
25.Infra Red Absorption by Hydrogen-Passivated Cracks in Silicon

机译：硅中氢钝化裂纹的红外吸收
- 作者：D.V. Kilanov;L.N. Safronov;V.P. Popov
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- hydrogen defects;
- infrared absorption;
- internal surface;
26.Kinetics of Surface Processes and Mechanisms of Alloy Intermixing Near Interfaces in Si(Ge)/Si_(1-x)Ge_x Structures Grown by Molecular Beam Epitaxy with Combined Sources

机译：结合源的分子束外延生长Si（Ge）/ Si_（1-x）Ge_x结构中合金界面附近合金的表面过程动力学和机理
- 作者：L.K. Orlov;N.L. Ivina
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- composition profile;
- growth kinetics;
- heteroepitaxy;
- interfaces;
- pyrolysis;
- segregation;
- SiGe solid solution;
27.Interstitial Diffusion Influence upon Two-Dimensional Boron Profiles

机译：间隙扩散对二维硼分布的影响
- 作者：F. Giannazzo;V. Raineri;V. Privitera;F. Priolo
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- diffusion;
- interstitials;
- scanning capacitance microscopy;
28.Interfacial Oxygen Thermodonor Formation in Plasma-Hydrogenated Silicon

机译：等离子体加氢硅中的界面氧热供体形成
- 作者：G.N. Kamaev;V.V. Bolotov;S.A. Chernaev;M.D. Efremov
- 会议名称：《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》 | 2001年
- hydrogen in silicon;
- hydrogen plasma;
- oxygen in silicon;
- oxygen-related thermal donors;
- silicon;