Platinum Silicide Precipitate Formation during Phosphorus Diffusion Gettering in Silicon

机译：硅中磷扩散吸收过程中硅化铂沉淀物的形成

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Analytical, high-resolution and scanning transmission electron microscopy as well as secondary ion mass spectroscopy has been used to study phosphorus diffusion gettering of platinum in silicon at 1100℃. These techniques consistently show that a thin layer of PtSi islands forms directly beneath the interface between the phosphorus silica glas and the silicon which accounts for about 50% of the gettered platinum atoms.

机译：分析，高分辨率和扫描透射电子显微镜以及二次离子质谱已用于研究铂在1100℃下在硅中的磷扩散吸收。这些技术一致地表明，在磷硅玻璃与硅之间的界面正下方直接形成了一层PtSi岛薄层，约占已吸收的铂原子的50％。

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《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》|2001年|p.411-416|共6页
会议地点 S. Tecla(IT);S. Tecla(IT)
作者
M. Seibt; A. Doeller; V. Kveder; A. Sattler; A. Zozime;
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作者单位

IV. Physikalisches Institut, Universitaet Goettingen, Bunsenstrasse 11-15, DE-37073 Goettingen, Germany;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
gettering; metal impurities in silicon; phosphorus diffusion; platinum in silicon; silicide precipitates;

机译：吸气硅中的金属杂质；磷扩散硅铂硅化物沉淀;

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1. Platinum Silicide Precipitate Formation during Phosphorus Diffusion Gettering in Silicon [J] . M. Seibt, A. Doller, V. Kveder, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2002,第0期

机译：硅中磷扩散吸收过程中硅化铂沉淀物的形成
2. Platinum Silicide Precipitate Formation during Phosphorus Diffusion Gettering in Silicon [J] . M. Seibt, A. Doller, V. Kveder, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2002,第0期

机译：硅中磷扩散吸收过程中硅化铂沉淀物的形成
3. Phosphorus diffusion gettering of platinum in silicon: Formation of near-surface precipitates [J] . Seibt M., Kveder V., Sattler A., Physica status solidi, B. Basic research . 2000,第1期

机译：铂在硅中的磷扩散吸杂：近表面沉淀物的形成
4. Study of Gettering Mechanisms in Silicon: Competitive Gettering Between Phosphorus Diffusion Gettering and Other Gettering Sites [C] . Mohammad B. Shabani, T. Yamashita, E Morita International Autuman Meeting on Gettering and Defect Engineering in Semiconductor Technology . 2008

机译：硅中吸收机制的研究：磷扩散吸血管与其他吸收网站的竞争气体
5. Nano-silicide formation through point contact reaction, nickel-silicon/silicon/nickel-silicon and platinum-silicon/silicon/platinum-silicon nanowire heterostructures for nanodevices. [D] . Lu, Kuo-Chang. 2008

机译：通过点接触反应，纳米硅器件的镍硅/硅/硅镍和铂硅/硅/铂硅纳米线异质结构形成纳米硅化物。
6. Phosphorus diffusion gettering process of multicrystalline silicon using a sacrificial porous silicon layer [O] . Derbali Lotfi, Ezzaouia Hatem 2012

机译：使用牺牲多孔硅层的多晶硅磷扩散吸杂工艺
7. Competitive gettering of iron in silicon photovoltaics : oxide precipitates versus phosphorus diffusion [O] . Murphy, John D., McGuire, R. E., Bothe, K., 2014

机译：硅光伏电池中铁的竞争性吸杂：氧化物沉淀与磷扩散
8. Metal gettering by boron-silicide precipitates in boron-implanted silicon [R] . Myers, S. M. , Petersen, G. A. , Headley, T. J. , 1996

机译：在硼注入的硅中通过硼硅化物沉淀金属

Platinum Silicide Precipitate Formation during Phosphorus Diffusion Gettering in Silicon

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