• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy >Infra Red Absorption by Hydrogen-Passivated Cracks in Silicon
【24h】

Infra Red Absorption by Hydrogen-Passivated Cracks in Silicon

机译：硅中氢钝化裂纹的红外吸收

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Annealing of hydrogen implanted silicon in volume forms hydrogen passivated microcracks. The aim of our efforts was a study of formation and growth of such cracks at various orientation of silicon surface. It was determined, that a fraction of chemically bonded hydrogen immediately after hydrogen implantation is approximately 20-50 % of total dose. Annealing at the temperatures 200 - 450℃ results in increasing absorption band intensity related to hydrogen passivated platelet defects and, consequently, the part of chemically bonded hydrogen grows. The lines of monohydride on crack surfaces in silicon wafers appeared only in (111) wafers in the IR absorption spectra with the dose range of 2 - 4xl0~(16) cm~(-2) at high-temperature (450 - 550?) annealing. The comparison of hydride lines position in spectra for the (111) and (100) wafers allowed us to conclude that cracks are oriented mainly parallel to the surface.
机译：大量注入氢的硅的退火形成氢钝化的微裂纹。我们努力的目的是研究在硅表面各种取向下这种裂纹的形成和生长。已经确定，在氢注入之后立即化学键合的氢的分数约为总剂量的20-50％。在200-450℃的温度下退火会导致与氢钝化的血小板缺陷相关的吸收带强度增加，因此，化学键合的氢部分会生长。硅晶片裂纹表面上的一氢化物线仅出现在（111）晶片中，其红外吸收光谱在高温（450-550？）范围为2-4x10〜（16）cm〜（-2）范围内。 ）退火。比较（111）和（100）晶片在光谱中的氢化物线位置，可以得出以下结论：裂纹的取向主要平行于表面。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号