Segregation of Mg Implanted into InAs: Influence of the Internal Elastic Stresses

机译：注入InAs中的Mg偏析：内部弹性应力的影响

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The model of diffusion of Mg implanted into InAs has been developed. It takes into account both the drift of dopant atoms in the field of the internal elastic stresses and the nonuniformity of the distribution of point defects. The consideration of the drift of dopant atoms in the field of internal elastic stresses allows one to explain the phenomenon of the movement of the dopant to the surface and the formation of the surface maximum of Mg concentration.

机译：已经开发了注入到InAs中的Mg扩散模型。它既考虑了掺杂原子在内部弹性应力场中的漂移，又考虑了点缺陷分布的不均匀性。考虑到内部弹性应力场中掺杂剂原子的漂移，可以解释掺杂剂向表面移动以及形成Mg浓度最大表面的现象。

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来源
《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》|2001年|p.569-574|共6页
会议地点 S. Tecla(IT);S. Tecla(IT)
作者
O.I. Velichko; V.A. Dobrushkin; A.K. Fedotov; V.A. Tsurko;
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作者单位

Belarusian State University of Informatics and Radioelectronics, P. Brovka Str. 6, 220027 Minsk, Belorussia;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
diffusion; elastic stress; indium arsenide; magnesium; segregation;

机译：扩散;弹性应力砷化铟镁;隔离;

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Segregation of Mg Implanted into InAs: Influence of the Internal Elastic Stresses

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