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Interfacial Oxygen Thermodonor Formation in Plasma-Hydrogenated Silicon

机译:等离子体加氢硅中的界面氧热供体形成

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摘要

The formation of thermal donors generated in Cz-Si under heat treatment at 450℃ has been investigated. The acceleration of growth rate for thermal donors was observed in near surface region of boron doped silicon with use of preliminary hydrogenation. It has been shown that namely atomic state of hydrogen is responsible for rapid formation of thermodonors due to its interaction with diluted oxygen.
机译:研究了在450℃热处理下Cz-Si中生成的热供体的形成。通过初步氢化,在硼掺杂的硅的近表面区域中观察到了供热体生长速率的加速。已经显示出氢的原子态由于其与稀氧的相互作用而负责快速形成热供体。

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