Temporal Characteristics of the Optical Storage Effect in Si:Er

机译：Si：Er中光存储效应的时间特性

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A detailed investigation into mid-infrared (MIR) emission enhancement of Er~(3+) embedded in silicon has been made using MIR pulses from a free electron laser. Based on time-resolved photoluminescence (PL) measurements, the enhancement effect has been linked to a slowly decaying component commonly appearing in the kinetics of the Si:Er PL signal. A model has been developed where the intensity enhancement is ascribed to the MIR-induced energy transfer from shallow traps to Er~(3+) ions. Taking into account saturation of the optically active erbium centers, the model can successfully describe the amplitude of the enhancement effect and its dependence on delay time of the MIR pulse with respect to the primary excitation in the visible pump pulse. The experimentally observed decrease of the enhancement effect at higher temperatures is ascribed to thermal ionization of nonequilibrium traps.

机译：利用来自自由电子激光器的MIR脉冲，对嵌入硅中的Er〜（3+）的中红外（MIR）发射增强进行了详细研究。根据时间分辨的光致发光（PL）测量，增强效果已与通常在Si：Er PL信号动力学中出现的缓慢衰减的成分有关。已经开发了一个模型，其中强度增强归因于MIR诱导的能量从浅阱到Er〜（3+）离子的转移。考虑到光学活性中心的饱和度，该模型可以成功地描述增强效应的幅度及其对MIR脉冲相对于可见泵浦脉冲中一次激发的延迟时间的依赖性。实验观察到的在较高温度下增强效果的降低归因于非平衡阱的热电离。

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来源
《9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy》|2001年|p.623-628|共6页
会议地点 S. Tecla(IT);S. Tecla(IT)
作者
M. Forcales; I.V. Bradley; J.-P.R. Wells; T. Gregorkiewicz;
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作者单位

Van der Waals-Zeeman Institute, University of Amsterdam, Valckenierstraat 65, NL-1018 XE Amsterdam, The Netherlands;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
erbium; free-electron laser; photoluminescence; silicon;

机译：铒;自由电子激光光致发光硅;

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Temporal Characteristics of the Optical Storage Effect in Si:Er

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