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High-resolution laser lithography based on vortex laser and composite layer

机译：基于涡旋激光和复合层的高分辨率激光光刻

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摘要

Traditional laser lithography systems cannot write sub-wavelength patterns due to the diffraction limit. In this paper, a novel super-resolution laser direct writing method is proposed to break through the diffraction limit. Compared with conventional lithography systems, the photoresist layer in this method is overlaid by an extra photochromic layer which is a mixture of metanil yellow and aqueous PVA solution. Then a vortex beam with a hollow energy distribution is used to expose the photochromic layer and make an annular region of the photochromic layer opaque to the writing beam. Thus, a virtual aperture is formed in the photochromic layer which can confine the diameter of the writing beam and reduce the linewidth exposed in the photoresist layer. Lithography process of this new method was modeled and a corresponding simulation was made. In this simulation, the intensity ratio of the two beams, relative absorption coefficients and other parameters were changed to study their influence to linewidth in the photoresist. An experimental setup was designed to validate the simulation, where the wavelengths of the writing beam and the vortex beam are 405 run and 532 nm, respectively. These two beams are strictly coaxial when they are incident to the photochromic layer. The experimental results agree quite well with the model simulation, showing that the linewidth could be reduced by increasing the intensity ratio of the vortex beam to the writing beam. They also indicate that the vortex beam could effectively reduce the lithography linewidth to 300nm or even smaller.
机译：由于衍射极限，传统的激光光刻系统无法写入亚波长图案。本文提出了一种突破衍射极限的超高分辨率激光直接写入方法。与常规光刻系统相比，该方法中的光刻胶层被额外的光致变色层覆盖，该变色层是间苯二酚黄和PVA水溶液的混合物。然后，使用具有中空能量分布的涡旋束来曝光光致变色层并使光致变色层的环形区域对写入束不透明。因此，在光致变色层中形成虚拟孔，该虚拟孔可限制写入光束的直径并减小在光致抗蚀剂层中曝光的线宽。对这种新方法的光刻工艺进行了建模，并进行了相应的仿真。在该模拟中，改变了两个光束的强度比，相对吸收系数和其他参数，以研究它们对光刻胶中线宽的影响。设计了一个实验装置来验证仿真，其中写入光束和涡旋光束的波长分别为405 nm和532 nm。当这两个光束入射到光致变色层时，它们是严格同轴的。实验结果与模型仿真非常吻合，表明可以通过增加涡旋光束与写入光束的强度比来减小线宽。他们还表明，涡旋光束可以有效地将光刻线宽减小到300nm或更小。

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